Press Kit
ATTENDANCE AT IEDM IS COMPLIMENTARY FOR THE PRESS.
If you plan to attend, please let us know.
Whether you would like to do a news story, conference preview or an in-depth exploration of a particular technology, please contact one of us for the additional information or interviews you may need.
Editor Contacts:
Gary Dagastine, co-Media Relations Director, at gdagastine@nycap.rr.com or by telephone at +1 518 785 2724
Chris Burke, co-Media Relations Director, at chris.burke@btbmarketing.com or by telephone at +1 919 872 8172
Registration/attendance questions:
Can be answered by Gail Sparks-Riegel, at gail@cemllc.com.
ABOUT IEDM
IEEE International Electron Devices Meeting (IEDM) is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electron-device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. The conference scope not only encompasses devices in silicon, compound, and organic semiconductors, but also emerging material systems.
The IEEE Electron Devices Society is dedicated to promoting excellence in the field of electron devices, and sponsors the IEDM. Learn more at https://eds.ieee.org/.
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2024 IEEE IEDM Press Kit
Welcome to the Editor Press Center. The following press materials may be downloaded from this site for news coverage of the 2024 IEEE IEDM.
Contacts
Gary Dagastine
co-Media Relations Director
+1 518 785 2724
gdagastine@nycap.rr.com
Chris Burke
co-Media Relations Director
1 919 872 8172
chris.burke@btbmarketing.com
2024 IEEE IEDM Photos with captions:
Selected images from the papers will be presented in two formats:
– Word file with images associated with a highlighted paper and the caption
– JPEG file with individual high-resolution Images
Paper 2.1, TSMC’s New, Industry-Leading 2nm CMOS Logic Platform
Individual images:
Paper 2.2 Extremely Scaled Transistors from Intel
Paper 2.5, TSMC’s Fully Functional Monolithic CFET Inverter at 48nm Gate Pitch
Paper 4.2, A Step Toward HZO-Based Memories
Paper 5.3, A Dense, Fast and Energy-Efficient 3D Chip for Computing-in-Memory
Paper 6.1, New Type of 4F2 DRAM
Paper 9.3, Engineered Substrate Drives Better RF and Power Performance
Paper 10.1, Record Performance with Aligned Carbon Nanotube Arrays
Paper 17.1, Accelerating Semiconductor R&D Productivity
Paper 18.2, Advancing the State-of-the-Art in Ultrasonic Sensing and Imaging
Paper 18.7, Just One Sensor for Pressure, Gas, and Temperature
Paper 24.3, Record Performance with 2D Channels
Paper 25.6, First Ultra-Wide Bandgap Power Device to Operate at 250◦C
Paper 26.4, Using AI-Driven Simulations to Understand Heat, All the Way from Atoms to Circuits
Paper 34.2, Boosting IGZO TFT Reliability for Future DRAMs
Paper 38.1, 3D FeNAND with Ultra-High Computing-in-Memory Efficiency
Paper 41.6, Combining Color Imaging and Ranging Information