Call for Papers Overview


The Annual International Electron Devices Meeting
will be held at the Hilton San Francisco Union Square
San Francisco, CA
December 7-11, 2019

DOWNLOAD the 2019 Call for Papers

Abstract Deadline : July 26, 2019

Extended to  Monday, July 29, 23:59 PDT

The paper submission deadline has been moved from June to July for submission of four-page, camera-ready papers to provide faster dissemination of the conference’s cutting-edge results. Accepted papers will be published as-is in the proceedings.

 Typical themes of interest in IEDM2019:New or trending areas:
• Logic device performance and circuit design challenges and solutions
• Advanced process integration schemes and scaling approaches
• Process module innovations and process control advancements
• Device technology co-optimization
• SiGe/Ge channel, GAA nanowire and stacked nanosheet advanced device technologies
• Sequential monolithic 3D integration and heterogeneous chiplets
• BEOL compatible transistors
EMERGING DEVICE and COMPUTE TECHNOLOGY (EDT)• 2D and devices on low-dimensional materials
• Neuromorphic and approximate computing devices
• Spintronic and magnetic devices
• Steep-slope devices
• Quantum computing devices
• Topological insulators and phase transitions transistors
• Emerging state machines, continuous time dynamical systems
• Cryo-CMOS and low-temp devices
MEMORY TECHNOLOGY (MT)• Conventional memories
• Emerging memories
• 3D memory technologies
• Computing in memory
• Memory for bio-inspired computing
• Novel materials and devices for ferroelectric memories
• Emerging memories for spiking neural networks
• Memory-enabled artificial intelligence applications
MICROWAVE, MILLIMETER WAVE and ANALOG TECHNOLOGY (MAT)• High Performance III-V and Si devices for mm-wave and THz
• Power device technologies for micro and mm-wave
• Micro and mm-wave analog front ends, PAs, LNAs and mixers
• Energy harvesting devices and circuits
• Tunable passives, SAW/BAW devices, antenna arrays
• Device and circuits for 5G and beyond
• mm-wave power
• Antenna arrays and beam forming
MODELING AND SIMULATION (MS)• Technology benchmarking
• Compact models
• Reliability and variability modeling
• Atomistic process and device modeling
• Memory and neuromorphic modeling
• Multiscale modeling of new technologies
• Self-heating and interconnect modeling
• Qubit modeling
OPTOELECTRONICS, DISPLAYS, and IMAGERS (ODI)• Heterogeneous opto-electronic integration technology (incl. light sources, modulators)
• High-speed wafer-level photonic-electronic integration
• Organic and inorganic displays
• Imagers (high time-resolution, high-sensitivity)
• Large-scale opto-electronic integration for sensors
• Optoelectronic integration for neuromorphic and quantum computing
• VCSEL/micro LED displays
POWER DEVICES and SYSTEMS (PDS)• Power devices, modules and systems
• System-level impact of power devices
• Manufacturing processes, device design, modeling, physics, and reliability of power devices
• Fundamental studies on doping, traps, interface states and device reliability for power switches
• New wide bandgap semiconductors
• Newer Applications from automotive to smart grid
• Reliability and variability-aware design
• Robustness and security of electronic circuits and systems.
• Reliability of devices and systems for biomedical, automotive and aerospace
• Degradation mechanisms of emerging memories
• Reliability of devices, circuits and systems for more-than-Moore
• Security and reliability of circuits and systems for the IoT.
• Reliability of wide bandgap (SiC, GaN) circuits and system
SENSORS, MEMS, and Bioelectronics (SMB)• Physical and biochemical sensors
• Energy harvesting and storage devices
• Flexible devices for wearable applications
• MEMS for Internet of Things
• Bio-electronics and implantable devices for health applications
• Optomechanical devices and sensors
• Hybrid organic/inorganic
• Sensors and devices for brain computer interfaces