Call for Papers
Present your latest breakthroughs in semiconductor devices and emerging technologies. Join leading researchers and contribute to the world’s premier forum for electron device innovation.
Submit a Paper
Overview
IEDM invites original, unpublished research demonstrating significant advances in electron devices, materials, and systems. Submissions must clearly present new results, technical innovation, and measurable impact.
Topics of Interest
Submissions are invited across a wide range of semiconductor and device technologies, including
ADVANCED LOGIC TECHNOLOGY (ALT)
Papers are solicited in the areas of CMOS platform technologies and applications (e.g., HPC, LOP, mobile, automotive, low-temperature CMOS, etc.), logic devices and circuits, process integration schemes for advanced nodes, innovations in materials, process, and metrology techniques, design technology co-optimization (DTCO) and system technology co-optimization (STCO), especially to meet demands in the AI era. Platform technologies include state-of-the-art Si and beyond-Si channel devices, gate-all-around devices, stacked devices with different polarity transistors, advanced interconnect, novel power distribution integration schemes, heterogeneous 2.5D/3D integration schemes, and BEOL-compatible transistors. Device architecture, device design and analysis, process integration, module advancements in process and patterning, metrology, physical layout effects, techniques for reduced variability, yield, thermal management, methodologies, and solutions for DTCO/STCO in the solicited areas are of high interest.
EMERGING DEVICE and COMPUTE TECHNOLOGY (EDT)
Papers are solicited on emerging nano-electronic devices and physics. This includes devices based on novel transport and control mechanisms such as tunnel FET, negative capacitance FET, cold-source FET, cryogenic devices, topological materials and devices, phase transitions, ferroelectrics and quantum effects. Devices based on low‐dimensional systems including 2D materials, CNTs, nanowires, single electron transistors and quantum dots are welcomed. Exploratory devices with novel device functions and/or novel materials for neuromorphic compute, approximate, probabilistic and analog compute, and non-charge-based compute such as spintronics are key topics. Furthermore, emerging state machines and time dynamical compute systems are also of interest. Qubit devices as well as devices and systems designed to enable quantum computing, quantum simulation and quantum annealing are of high interest. Papers in EDT focus primarily on device physics and novel elaboration concepts.
MEMORY TECHNOLOGY (MT)
Papers are solicited across various domains in memory and storage technologies. This encompasses advancements and scaling in established technologies like SRAM, DRAM, and Flash, as well as breakthroughs in emerging innovations such as MRAM, PCM, FRAM, RRAM, ECM, SOM Cross-Point memory, organic memory, and NEMS-based memory. These include research pertaining to materials and devices for memory and selector in electrostatic and atomistic switching mechanisms, as well as the design and implementation of memory cells and arrays in 3D constructs, including stacking and tiering, alongside read/write access mechanisms. Additionally, submissions of novel approaches to homogenous or heterogenous integration and manufacturing techniques of memory in semiconductor fabrication or packaging assembly are welcome. Papers not mainly focused on improvements of memory FoMs but are disclosing novel computing architecture or algorithms such as CiM may be transferred to other technical sections such as EDT or NC at the discretion of the committee.
MODELING and SIMULATION (MS)
Papers are solicited on theoretical or computational studies of electronic devices, including logic, memory, optical components, interconnects, power related devices, display, sensors, MEMS, and bioelectronics. The approaches used in the study may include analytical, numerical, statistical, and machine-learning/AI-based methods applied to structures ranging from atomistic to device dimensions, and up to full-chip dimensions, including physics-based compact modeling. Central to submissions is the innovation of devices, whether through predictive insight into novel device concepts, predictive analysis demonstrating significant device improvements, breakthroughs in theoretical understanding of device operation, advancements in knowledge of device processing facilitating enhanced device performance, novel insights into variability, reliability, and yield issues, or breakthroughs in device optimization based on DTCO and STCO. Topics also include ab-initio/atomistic materials modeling, neuromorphic computing modeling, quantum computing and quantum-resilient hardware modeling, spintronics, low-dimensional devices, ferroelectrics, thermal modeling, optoelectronics, displays and imaging systems modeling, power devices, millimeter-wave and analog technologies, 3D/heterogeneous integration and advanced packaging modeling, electro-chemical/mechanical devices, bio-nano sensors for brain-computer interfaces and innovation in compact modeling. Encouragement is given for comparison with experimental data, model calibration, and utilization of multi-scale simulation chains.
NEUROMORPHIC AND NOVEL COMPUTING (NC)
Papers are solicited on advancements in semiconductor memory and logic devices, as well as the circuits and algorithms that leverage them, for new and unconventional compute paradigms. Specific areas of interest span neuromorphic computing and advanced artificial intelligence (AI) acceleration techniques, broadly encompassing analog/mixed- signal computing, compute-in-memory (CIM) devices and circuits for advanced AI workloads, probabilistic computing, and bio-inspired computing such as spiking neural networks, reservoir computing, combinatorial optimization, and content-addressable memory. Use cases across the compute continuum—from the datacenter to the edge (e.g., in-sensor computing)—are highly contemplated. Submissions demonstrating novel device concepts that fundamentally improve computational efficiency, full hardware integration, explicit device-algorithm co-optimization to mitigate non-ideal device properties, and real-world applications are of highest interest. Papers focusing primarily on near-memory computing may be transferred to the MT subcommittee, while papers centered on optical or quantum computing may be transferred to EDT, at the discretion of the committee.
OPTOELECTRONICS, DISPLAYS and IMAGERS (ODI)
Papers are solicited on optoelectronics, displays, and imaging systems. This includes novel devices, structures, and integration for image sensors, displays, light sources, photonic devices, and high-speed photodetectors and modulators. New technologies on heterogeneous integration of optoelectronics devices as well as on photonic-electronic integration for optical interconnects, on-chip networks and sensing are welcomed. Papers on quantum photonics, neuromorphic photonics, and plasmonics for quantum computation, sensing and encryption are also of interest. Furthermore, ODI includes CMOS imagers, high-speed and high-time resolution imagers, tacked imagers sensors, single-photon sensitivity, Time-Of-Flight and non-visible image sensors. In addition, papers on displays of all types, for augmented or virtual reality, holography, TFTs for photonics applications, flexible, stretchable, and/or printed electronics, in-display sensors are encouraged. Papers on displays or light emitting devices with novel materials such as perovskites or quantum dots are also of interest.
POWER, MILLIMETER WAVE, and ANALOG TECHNOLGY (PMB)
Contributions are sought on novel circuit topologies, manufacturing processes, supporting modeling (TCAD and compact models), device physics, reliability, and materials (Si, III-Vs, SiC, (Al)GaN, Ga2O3, AlScN, LiNbO3, diamond, LTO, BN, etc.) along with fundamental studies on doping, deep-level traps, interface states, and device reliability for power switching and high frequency devices. Papers are solicited on discrete and integrated power and high frequency (micro, mm-wave and THz) devices and physics, modules and systems. Topics of interest include devices (diodes, BJTs, FETs, super-junction devices, heterostructures, IGBTs, HEMTs, HBTs, light- triggered structures for galvanic isolation and faster switching, bi-directional switches, vertical geometry devices) and device/package/circuit interactions, including thermal management. A wide variety of applications are also within the scope of PMA: (power conversion, supply, regulation and conditioning for computers and data centers, motor drives, transportation, solar, wind, smart grid applications, wireless power harvesting/transfer, beam formers, power amplifiers, tunable passives, antenna arrays).
RELIABILITY OF SYSTEMS and DEVICES (RSD)
Papers are solicited that focus on component-level FEOL/MOL/BEOL characterization and reliability modeling, reliability evaluation, both experimental and modeling, of devices dedicated to analog, logic, and memory applications, interconnects, circuits, and systems. In addition to Si-based technologies, authors are encouraged to submit their recent achievements made employing other material systems, such as SiGe, IGZO, ferroelectric materials, 2D materials, etc. The reliability topics include, for FEOL, transistor degradation due to hot carriers, bias temperature instabilities, random telegraph noise, dielectric SILC and breakdown as well as modeling the aging and wearout behavior. For MOL/BEOL, topics include the breakdown of MOL spacers and BEOL dielectrics, electromigration, and stress migration failures of contacts and interconnects. For product, system, and circuit reliability, topics include latch-up, ESD, soft error mechanisms, variability-aware design, and design for reliability, robustness, and security of electronic circuits and systems. Of particular interest are investigations of degradation mechanisms for devices, circuits, and systems in the following areas: conventional and emerging memories; beyond CMOS devices; 3D IC package reliability; more-than-Moore applications; biomedical devices and systems; automotive and aerospace.
SENSORS, MEMS, and BIOELECTRONICS (SMB)
Papers are solicited in the areas of sensors, MEMS/NEMS, microfluidics and lab-on-chip, BioMEMS, and bioelectronic devices and systems, with emphasis on new device concepts, integrated CMOS implementations, embedded intelligence, and multifunctional microsystems for applications in health, communication, mobility, energy, defense, and extreme environments. Sensors include chemical, biological, acoustic, electrical, electrochemical, magnetic, and mechanical modalities. Topics of interest include physical and biochemical sensors, actuators, resonators, inertial microsystems, RF MEMS, SAW/BAW and acoustic devices, optomechanical devices, energy-harvesting and micro- power devices, and microsystems that integrate sensing, actuation, readout, control, and packaging. Bioelectronics covers hybrid organic/inorganic devices, point-of-care and implantable systems, neural and bioelectronic interfaces, flexible and soft devices, multimodal biomedical sensing, and nanosensors for brain-computer interfaces.
Paper Preparation
Authors must submit a four-page paper using the official IEDM template. Submissions should clearly state the purpose, technical contribution, and experimental results demonstrating advancement beyond current work.
Submission Requirements and Opportunities
Understand submission process, student eligibility, and publication policies to ensure compliance and maximize your paper’s acceptance potential.
