IEDM

2018 IEDM Program

The papers have been accepted for the 2018 IEDM.  Click here to access the list.

Acceptance letters will be emailed no later than September 28, 2018.

Monday — 9:00 am – 12:00 pm

Session 1 — Plenary Session

Monday – 1:30 pm – 5:00 pm

Session 2: Memory Technology — Charge Based Memories

Session 3: Circuit and Device Interaction — Device and Algorithm Co-design for Neuromorphic and In-memory Computing

Session 4: Sensors, MEMS, and BioMEMS — Micro and Nano Electromechanical Systems

Session 5: Focus Session – Characterization, Reliability, and Yield — Interconnects to Enable Continued Scaling

Session 6: Focus Session – Nano Device Technology — Quantum Computing Devices

Session 7: Process and Manufacturing Technology — 3D Integration and Memory Technologies

Session 8: Power Devices/ Compound Semiconductor and High-Speed Devices — Advances in Silicon Carbide and Gallium Oxide Silicon Power Devices

Session 9: Modeling and Simulation — Modeling and Simulation of Negative Capacitance Transistors

Session 10: Optoelectronics, Displays, and Imagers — Image Sensors

Monday 6:30 pm – 8:00 pm

Grand Ballroom — RECEPTION

Tuesday – 9:00 am – 12:30 pm

Session 11: Process and Manufacturing Technology — Material and Processes for Advanced Silicon Technologies

Session 12: Sensors, MEMS, and BioMEMS — Integrated Ion and Gas Sensors

Session 13: Nano Device Technology — Nano-Devices for Low-Power Technologies Session 4 NDT

Session 14: Focus Session – Compund Semiconductor and High Speed Devices —  Future Technologies Towards Wireless Communications:  5G and Beyond

Session 15: Circuit and Device Interaction — Emerging Devices for Neural Network and IoT

Session 16: Modeling and Simulation — Advanced Modeling of ferroelectric materials and devices

Session 17: Characterization, Reliability, and Yield — Innovative Characterizations

Tuesday – 2:15 pm – 5:30 pm

Session 18: Circuit and Device Interaction — Embedded Memory at Advanced CMOS Nodes

Session 19: Focus Session – Compound Semiconductor and High Speed Devices — Challenges for Wide Bandgap Device Adoption in Power Electronics

Session 20: Memory Technology — RRAM for Neuromorphic Applications

Session 21: Process and Manufacturing Technology — Advanced Gate All Around Process

Session 22: Nano Device Technology — 2D CMOS and Memory Devices

Session 23: Optoelectronics, Displays, and Imagers  — Silicon Photonics

Session 24: Modeling and Simulation — 2D Materials, Modeling, and the Optimization of Beta-Ga2O3 Power Devices

Session 25: Characterization, Reliability, and Yield — Emerging Memory Reliability

Tuesday – 8:00 pm – 10:00 pm

Continental 1-5  — Session 26 – IEDM Evening Panel Session

Wednesday – 9:00 am – 12:00 pm

Session 27: Memory Technology — MRAM & PCRAM

Session 28: Circuit and Device Interaction — Advanced CMOS Technology for Computing in the Nanoscale Era

Session 29: Sensors, MEMS, and BioMEMS — Biosensors and Neural Interfaces

Session 30: Power Devices/Compound Semiconductor and High-Speed Devices Committee — GaN Power Devices

Session 31: Nano Device Technology — NCFET Physics and Devices

Session 32: Optoelectronics, Displays, and Imagers — CMOS Photodetectors

Session 33: Modeling and Simulation — Device, Process and Reliability Modeling

Session 34: Characterization, Reliability, and Yield — Advanced Technology Reliability

Wednesday – 1:30 pm – 4:05 pm

Session 35: Process and Manufacturing Technology — Advanced Channel and Contact Technologies

Session 36: Nano Device Technology — Spintronic Devices and Applications

Session 37: Memory Technology — 1S1R Arrays and Select Devices

Session 38: Optoelectronics, Displays, and Imagers —  Displays, TFTs, and Optical Synapses

Session 39: Compound Semiconductor and High Speed Devices — High Performance III-V Devices and Technology Towards 5G

Session 40: Modeling and Simulation — Simulation and Modeling of Advanced Process and Emerging Memory