ADVANCED LOGIC TECHNOLOGY (ALT)

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Papers are solicited in the areas of CMOS platform technologies and applications (e.g., HPC, LOP, mobile, automotive, low-temperature CMOS, etc.), logic devices and circuits, process integration schemes for advanced nodes, innovations in material, process and metrology techniques, and design technology co-optimization (DTCO) and system technology co-optimization (STCO). Platform technologies include state-of-the-art Si and beyond-Si channel devices, gate-all-around devices, stacked devices with different polarity transistors, advanced interconnect, novel power distribution integration schemes, heterogenous 2.5D/3D integration schemes, and BEOL compatible transistors. Device architecture, device design and analysis, process integration, module advancements in process and patterning, metrology, physical layout effects, techniques for reduced variability, yield, thermal management, methodologies and solutions for DTCO/STCO in the solicited areas are of high interest.

EMERGING DEVICE and COMPUTE TECHNOLOGY (EDT)

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Papers are solicited on emerging nano-electronic devices and physics. This includes devices based on novel transport and control mechanisms such as tunnel FET, negative capacitance FET, cold-source FET, topological materials and devices, phase transitions, ferroelectrics and quantum effects. Devices based on low‐dimensional systems including 2D materials, CNTs, nanowires, single electron transistors and quantum dots are welcomed. Exploratory devices with novel device functions and/or novel materials for neuromorphic compute, approximate and analog compute, and non-charge-based compute such as spintronics are key topics. Furthermore, emerging state machines and time dynamical compute systems are also of interest. Qubit devices as well as devices and systems designed to enable quantum computing, quantum simulation and quantum annealing are of high interest. Papers in EDT focus primarily on device physics and novel elaboration concepts.

MEMORY TECHNOLOGY (MT)

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Papers are solicited in the areas related to embedded and standalone memory technology. This includes advances in both conventional memories including SRAM, DRAM and Flash, and emerging memories including ReRAM, MRAM, PCRAM, ferroelectric memory, crosspoint memory and selectors, organic memory and NEMS‐based memory, as well as their applications in the areas of AI and near-Memory compute. Topics span from demonstration of novel device concepts to fully integrated memory arrays, and from product prototyping to manufacturing related challenges and solutions. Demonstrations of manufacturing maturity of emerging memories and future scaling of conventional memories to solve the memory wall issues are of high interest. Submission of papers on novel device concepts and demonstrations, novel integration schemes, novel circuit design schemes, and novel memory architectures that enhance memory performance, scaling, 3D stacking, capacity/bandwidth increasing, and power/energy reduction are strongly encouraged. Papers based on novel device physics and in-memory computing may be transferred to EDT or NC at the discretion of the committee.

MODELING and SIMULATION (MS)

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Papers are solicited on theoretical approaches to electronic devices, including logic devices, memory devices, optical devices, interconnects and (bio)sensors. Theoretical approaches include analytical, numerical, statistical, and machine-learning/AI-based approaches applied to structures with dimensions ranging from atomistic over device dimensions to full-chip dimensions, including physics-based compact modeling. Key to submissions is, that the device innovation is central, either through predictive insight in the potential of novel device concepts, predictive analysis revealing significant improvement to devices, breakthroughs in the theoretical understanding of the device operation, breakthroughs in the understanding of device processing enabling improved device performance, novel insights in variability, reliability and yield issues, breakthrough in device optimization based on DTCO. Topics also include ab-initio/atomistic materials modeling, modeling of neuromorphic computing, quantum computing, spintronics, low-dimensional devices, ferroelectrics, thermal modeling, 3D/heterogeneous integration, electro-chemical/mechanical devices. Comparison with experimental data, model calibration and multi-scale simulation chains are highly encouraged.

NEUROMORPHIC COMPUTING (NC):

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Papers are solicited in the areas related to devices, circuits, and algorithms for neuromorphic computing and AI. We welcome submissions covering a wide range of areas in neuromorphic computing including but not limited to: analog in-memory deep learning, compute-in-memory, probabilistic/approximate/analog computing, combinatorial optimization, machine learning, and AI applications, edge computing, unclonable functions, reservoir computing, spiking neural network, artificial intelligence, in-sensor computing, and bio-inspired computing based on memory/logic/sensor/nanoelectronic/MEMS devices and their novel architecture and physics. Demonstration of real-world applications, full hardware integration, device-algorithm co-optimization, novel device concepts improving computational efficiency, and new algorithms mitigating non-ideal properties of devices and materials are of high interest.