Session 8: Optoelectronics, Displays, and Imagers Thin Film Transistors and Detectors
Monday, December 4
Continental Ballroom 7-9
Co-Chairs: Arokia Nathan, University of Cambridge
Changhee Lee, Seoul National University
8.1 Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors, A. Daus, S. Han, S. Knobelspies, G. Cantarella, C. Vogt, N. Münzenrieder*, and G. Tröster, ETH Zürich, *University of Sussex
Flexible ultra-thin chalcogenide glass Ge2Sb2Te5 (GST) p-type thin-film transistors (TFTs) are investigated. For the first time, GST TFTs show saturating output characteristics. Together with n-type InGaZnO4, 2017 flexible CMOS inverters with a voltage gain of 69 and NANDs are realized. The devices sustain tensile bending to a radius of 6 mm.
8.2 Highly Robust Oxide Thin Film Transistors with Split Active Semicondcutor and Source/Drain Electrodes, S. Lee,; D. Geng*, L. Li*, M. Liu* and J. Jang, Kyung Hee University, *University of Chinese Academy of Sciences
We report extremely stable and high performance etch-stopper a-IGZO TFT on plastic substrate by using split semiconductor and electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under bias and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.
8.3 Manufactured-on-demand steep subthreshold organic field effect transistor for low power and high sensitivity ion and fluorescence sensing, J. Zhao, Q. Li, Y. Huang, S. Li, W. Tang, S. Peng, S. Chen, W. Liu and X. Guo, Shanghai Jiao Tong University
A printable device structure design is introduced to fabricate low voltage organic field effect transistor (OFET) of steep subthreshold (80 mV/dec) using thick gate dielectric layers and high throughput printing/coating processes. The device design also bring benefit on excellent bias stress stability. The device is shown to able to be biased in the subthreshold regime with near zero gate voltage for low power and high sensitivity detection of both small H+ concentration (< 10 uW cm-2) changes.
8.4 Black Phosphorus Carbide Infrared Phototransistor with Wide Spectrum Sensing for IoT Applications, W. C. Tan, L. Huang, R. J. Ng, L. Wang and K.-W. Ang, National University of Singapore
We demonstrate a novel black phosphorus carbide (b-PC) phototransistor with a wide absorption spectrum that spans most molecular fingerprints till 8,000 nm and a tunable responsivity and response time at a wavelength of 2,004 nm. The b- PC phototransistor achieves a high responsivity of 2,163 A/W and a short response time of 5.6 ps, showing promise for sensing applications in the coming age of the internet-of-things (IoT).
3:15 PM Coffee Break
8.5 Thermally Stable and Flexible Paper Photosensors Based on 2D BN Nanosheets, C.-H. Lin, B. Cheng, M.-L. Tsai, H.-C. Fu, W. Luo*, L. Zhou*, S.-H. Jang*, L. -B. Hu and J.-H. He, King Abdullah University of Science and Technology (KAUST), * University of Maryland
Flexible solar-blind deep-ultraviolet sensors consisting of BN nanosheets show ultrahigh thermal conductivity (146 W/m K), fast recovery-time (0.393 s), and excellent flexibility and bending durability. This shows great potential to be a key electronic component to fully activate flexible electronics for meeting the demand of internet of things.
8.6 High-Performance, Flexible Graphene/Ultra-thin Silicon Ultra-Violet Image Sensor, A. Ali, K. Shehzad, H. Guo, Z. Wang*, P. Wang*, A. Qadir, W. Hu*, T. Ren**, B. Yu*** and Y. Xu, Zhejiang University, *Chinese Academy of Sciences, **Tsinghua University, ***State University of New York
We report a high-performance graphene/ultra-thin silicon metal-semiconductor-metal ultraviolet (UV) photodetector, which benefits from the mechanical flexibility and high-percentage visible light rejection of ultra-thin silicon. The proposed UV photodetector exhibits high photo-responsivity, fast time response, high specific detectivity, and UV/Vis rejection ratio of about 100, comparable to the state-of-the-art Schottky photodetectors
8.7 Graphene/Silicon-Quantum-Dots/Si Schottky-PN Cascade Heterojunction for Short-Wavelength Infrared Photodetection, S. Du, Zhenyi Ni, X. Liu, H.Guo, A. Ali, Y. Xu and X. Pi, Zhejiang University
By taking advantage of the fast photo-carriers transfer between graphene and silicon-quantum- dots, along with infrared tunable Schottky- barrier height of graphene-silicon junction, a novel Schottky- PN cascade heterojunction based photodetector has been demonstrated. The hyper- boron-doped silicon-quantum-dots, interacting with the graphene-silicon Schottky photodiode, effectively and fast harvest infrared-excited charge-carriers.