IEDM

Session 36: Nano Device Technology Device Technologies for Disruptive Computing

Wednesday, December 6
Continental Ballroom 4
Co-Chairs: Heike Riel, IBM Research
Iuliana Radu, imec

1:35 PM
36.1 MoS2/VO2 vdW heterojunction devices: tunable rectifiers, photodiodes and field effect transistors, N. Oliva, E. A. Casu, C. Yan*, A. Krammer**, A. Magrez***, A. Schueler**, O. J. F. Martin* and A. M. Ionescu, Nanoelectronic Device Laboratory (Nanolab), *Nanophotonics and Metrology Laboratory (NAM), **Solar Energy and Building Physics Laboratory and ***Istitut de Physique, EPFL

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heterojunctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface determines a tunable diode-like characteristic with a rectification ratio larger than 103. Moreover, the heterojunction can be turned into a Schottky rectifier with higher on- current by triggering the VO2 insulator to metal transition (IMT), by either applying a sufficiently large voltage or increasing the temperature above 68 °C. The proposed devices are photosensitive with linear photoresponse and temperature tunable photoresponsivity values larger than 1 in the 500/650 nm wavelength range. We finally report the first ever field-effect transistor based on gated MoS2/VO2 heterojunctions, which is a true low power FET exploiting a phase change material where the electrostatic doping effect of the gate on the junction results in a subthreshold slope (SS) of 130 mV/dec at room temperature, ION/IOFF > 103 and IOFF < 5 pA/µm at VD=1.5V.

2:00 PM
36.2 A Single Magnetic-Tunnel-Junction Stochastic Computing Unit, Y. Lv and J.-P. Wang, University of Minnesota

We propose and experimentally demonstrate a stochastic computing unit with a single magnetic tunnel junction. It performs addition and multiplication operations and requires no additional logic gates. This scheme benefits from high energy efficiency of magnetic tunnel junction operated by spin-transfer torque or other future switching mechanisms, and error tolerance, low complexity and low area cost of stochastic computing.

2:25 PM
36.3 Neuromorphic Computing through Time-Multiplexing with a Spin-Torque Nano-Oscillator (Invited), M. Riou, F. Abreu Araujo, J. Torrejon, S. Tsunegi*, G. Khalsa**, D. Querlioz**, P. Bortolotti, V. Cros, K. Yakushiji*, A. Fukushima*, H. Kubota*, S. Yuasa*, M. D. Stiles**, and J. Grollier, CNRS, Univ. Paris-Sud, Université Paris-Saclay, *National Institute of Advanced Industrial Science and Technology (AIST), **National Institute of Standards and Technology

Fabricating powerful neuromorphic chips the size of a thumb requires miniaturizing their basic units: synapses and neurons. The challenge for neurons is to scale them down to submicrometer diameters while maintaining the properties that allow for reliable information processing: high signal to noise ratio, endurance, stability, reproducibility. In this work, we show that compact spin-torque nano-oscillators can naturally implement such neurons, and quantify their ability to realize an actual cognitive task. In particular, we show that they can naturally implement reservoir computing with high performance and detail the recipes for this capability.

2:50 PM
36.4 STDP synapse with outstanding stability based on a novel insulator-to-metal transition FET, P. Stoliar, A. Schulman, A. Kitoh, A. Sawa and I. H. Inoue, 1National Institute of Advanced Science and Technology (AIST)

We have developed an ultra-stable STDP synapse based on a gate-controlled insulator-to-metal- transition FET. Since a metallic channel is used, stochastic phenomena have little effect; therefore, the distinguished stability with a large dynamic range and with a very low power consumption is realized.

3:15 PM
36.5 All-electrical universal control of a double quantum dot qubit in silicon MOS, P. Harvey-Collard, R. M. Jock*, N. T. Jacobson*, A. D. Baczewski*, A. M. Mounce*,M. J. Curry*, D. R. Ward*, J. M. Anderson*, R. P. Manginell*, J. R. Wendt*, M. Rudolph*, T. Pluym*, M. P. Lilly*, M. Pioro-Ladrière and M. S. Carroll*, Université de Sherbrooke, *Sandia National Laboratories

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.