Session 25: Process and Manufacturing Technology Beyond Conventional CMOS

Wednesday, December 7, 9:00 a.m.
Grand Ballroom A
Co-Chairs: John Dukovic, Applied Materials
Guilhem Larrieu, CNRS LAAS

9:05 AM
25.1 Heterostructure at CMOS Source/drain: Contributor or Alleviator to the High Access Resistance Problem?, H. Yu, M. Schaekers, E. Rosseel, J. L. Everaert, P. Eyben, T. Chiarella, C. Merckling, T. Agarwal, G. Pourtois, A. Hikavyy, S. Kubicek, L. Witters, A. Sibaja-Hernandez, J. Mitard, N. Waldron, S. Chew, S. Demuynck, N. Horiguchi, K. Barla, A. Thean*, A. Mocuta, D. Mocuta, N. Collaert, and K. De Meyer, imec, *National University of Singapore

This paper studies heterostructure interface resistivity with experiments and simulations. The paper elaborates on how to reduce resistances between p-SiGe/p-Si, and how to make use of favorable conduction band alignment property of n- Si/n-Ge to achieve ultralow contact resistivity on n-Ge. n-InAs/n-Si and n-InAs/n-Ge heterostructures are qualitatively discussed.

9:30 AM
25.2 General Relationship for Cation and Anion Doping Effects on Ferroelectric HfO2 Formation, L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita* and A. Toriumi, The University of Tokyo, *National Institute of Advanced Industrial Science and Technology

This work discusses the general relationship for cation and anion doping effects on the HfO2 para-/ferroelectric transition, which will provide us a helpful instruction for precise HfO2 ferroelectricity design. In addition, ferroelectric N-doped HfO2 has been demonstrated as a gate dielectric film on an oxide semiconductor for ferroelectric field-effect transistors (FeFETs).

9:55 AM
25.3 Monolithic Integration of AgTe/TiO2 Based Threshold Switching Device with TiN Liner for Steep Slope Field-Effect Transistors, J. Song, J. Park, K. Moon, J. Woo, S. Lim, J. Yoo, D. Lee, H. Hwang, Pohang University of Science and Technology (POSTECH)

AgTe/TiN/TiO2/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO2 interface to prevent in-diffusion of Ag into the TiO2 layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (Ion/Ioff) of >108 with a low drain voltage (0.5 V) even after the 400oC annealing process.

10:20 AM
25.4 Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use, S. K. Kim, J. Shim, D.-M. Geum, C. Z. Kim**, H.-S. Kim, Y.-S. Kim, H.-K. Kang, J. D. Song, S.-J. Choi*, D. H. Kim*, W. J. Choi, H.-J. Kim, D. M. Kim*, S.H. Kim, Korea Institute of Science and Technology (KIST), *Kookmin University, **Korea Advanced Nanofab Center (KANC)

Defect-less semiconductor-on-insulator (-OI) by a cost- effective and low temperature process is strongly needed for monolithic 3D (M3D) integration. Toward this, in this paper, we present a cost-effective fabrication of the InGaAs-OI structure featuring the direct wafer bonding (DWB) and the epitaxial lift-off (ELO) techniques as well as the re-use of the InP donor wafer. We systematically investigated the effects of the pre-patterning of the III-V layer before DWB, surface reforming (hydrophilic), and electro-chemical etching to speed up the ELO process for a fast and high-throughput process, which is essential for cost reduction. We also demonstrated the re-usability of the InP donor wafer. Finally, as a result of the high film quality of the InGaAs channel combined with DWB and ELO, fabricated InGaAs-OI MOSFETs show a record-high effective mobility of ~2800 cm2/Vs among surface channel In0.53Ga0.47As MOSFETs reported so far.

10:45 AM
25.5 Extremely High Modulation Efficiency III-V/Si hybrid MOS Optical Modulator Fabricated by Direct Wafer Bonding, J. Han, M. Takenaka and S. Takagi, The University of Tokyo

We have demonstrated an optical modulator with an InGaAsP/Si hybrid MOS-based phase shifter on Si photonics platform by using direct wafer bonding. Since the larger electron-induced refractive index change in InGaAsP than Si, a modulation efficiency VπL of 0.047 Vcm, which is approximately 5 times larger than Si, is achieved.

11:10 AM
25.6 Additive Manufacturing for Electronics “Beyond Moore” (Invited), J. Veres, R. Bringans, E. Chow, J.P. Lu, P. Mei, S. Ready, D. Schwartz and R. Street, PARC, a Xerox Company

Additive manufacturing and 3D printing are poised to reshape entire manufacturing value chains. To be truly disruptive, additive manufacturing has to move beyond shapes and colors. Novel printing technologies are beginning to emerge that enable conformal electronics and even printing with inks containing microchips. This in turn also creates new openings for the progress of electronics itself. Over the last 50 years silicon microelectronics advanced through shrinking device dimensions and packing more and more functionality into tiny spaces. Printing technologies open up exciting new ways of scaling electronics “Beyond Moore”, through the integration of micro and macro, creating new form factors, complex shapes, conformal devices and distributed systems. Printed, hybrid electronics systems will enable new classes of sensor systems, structural electronics and wearable devices, where the “system is the package”