Session 24: Optoelectronics, Displays and Imagers Silicon Technology Based Optoelectronics
Tuesday, December 5
Continental Ballroom 7-9
Co-Chairs: Lars Zimmermann, IHP
Boon Ooi, KAUST
24.1 Hybrid III-V/Si DFB laser integration on a 200 mm fully CMOS-compatible silicon photonics platform, B. Szelag, K. Hassan, L. Adelmini, E. Ghegin, Ph. Rodriguez, S. Bensalem, F. Nemouchi, T. Bria, M. Brihoum, P. Brianceau, E. Vermande, O. Pesenti, A. Schembri, R. Crochemore, S. Dominguez*, M.C. Roure, B. Montmayeul, L. Sanchez, C. Jany, University Grenoble Alpes, *STMicroelectronics
We demonstrate the first integration of a hybrid III-V/Si laser in a fully CMOS compatible 200mm technology. Device with SMSR up to 50 dB and a maximum output power of 4mW coupled in the waveguide have been measured. The fabrication flow is fully planar and compatible with large scale integration silicon photonics circuit.
24.2 Quantum Confinement Effects in GeSn/SiGeSn Heterostructure Lasers (Invited), D. Stange, N. von den Driesch, D. Rainko, T. Zabel*, B. Marzban**, Z. Ikonic^, P. Zaumseil, G. Capellini, S. Mantl, J. Witzens**, H. Sigg*, D. Grützmacher and D. Buca, Forschungszentrum Jülich GmbH, *Paul Scherrer Institute, **RWTH Aachen, ***University of Leeds, ^IHP
We discuss direct bandgap group IV materials, GeSn/SiGeSn heterostructures and resulting quantum confinement effects for laser implementation. After material characterization, optical properties, including lasing, are probed via photoluminescence spectrometry. The quantum confinement effect in GeSn wells of different thicknesses is investigated. Theoretical calculations show strong quantum confinement to be undesirable past a certain level, as the very different effective masses of Γ and L electrons lead to a decrease of the L- to Γ-valley energy difference. A main limiting factor for lasing devices turns out to be the defective region at the interface to the Ge substrate due to the high lattice mismatch to GeSn. The use of buffer technology and subsequent pseudomorphic growth of multi-quantum-wells structures offers confinement of carriers in the active material, far from the misfit dislocations region. Performance is strongly boosted, as a reduction of lasing thresholds from 300 kW/cm2 for bulk devices to below 45 kW/cm2 in multi-quantum-well lasers is observed at low temperatures, with the reduction in threshold far outpacing the reduction in active gain material volume.
24.3 Monolithic Integration of O-band Photonic Transceivers in a “Zero-change” 32nm SOI CMOS, S. Moazeni, A. Atabaki*, D. Cheian*, S. Lin, R. J. Ram*, and V. Stojanović, University of California, *Massachusetts Institute of Technology
We demonstrate a monolithic silicon photonic platform in an unmodified 32nm SOI CMOS process. This platform provides the fastest transistors ever monolithically integrated with photonics. We demonstrate 12 Gb/s O-band optical transceivers by resonant-based modulators/detectors with analog front-end circuits. This scheme provides the electro-photonic performances needed for HPC applications.
3:15 PM Coffee Break
24.4 Tunnel-Modulated Ge LED/Laser Light Source and a Sub-Thermal Voltage Switching Detector for the Monolithic On-Chip Optical Transceiver, R. Koerner, I. A. Fischer, R. Soref *, D. Schwarz, C. J. Clausen, L. Hänel, M. Oehme, J. Schulze, University of Stuttgart, *University of Massachusetts
We report the first demonstration of a Ge based, steep switching (114 mV/dec), directly tunnel-modulated LED/laser light source (Germanium Zener-Emitter) and sub-thermal voltage-switching (31 mV/dec) photodetector (Germanium Esaki-Collector), for the monolithic integration of an optical transceiver on Silicon (100).
24.5 A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform, F. Eltes, M. Kroh*, D. Caimi, C. Mai*, Y. Popoff, G. Winzer*, D. Petousi*, S. Lischke*, J. E. Ortmann**, L. Czornomaz, L. Zimmermann*, J. Fompeyrine, S. Abel, IBM Research – Zurich, *IHP, **The University of Texas at Austin
We demonstrate the first electro-optic modulator exploiting the Pockels effect monolithically integrated on an advanced silicon photonics platform. The devices, based on barium titanate thin films on 200 mm, show excellent VpiL (0.3 Vcm) and VpiLa (1.7 VdB), high-speed operation (25 Gbps), and low static power tuning (100 nW).