Session 20: Power Devices System-level Impact of Power Devices

Tuesday, December 6, 2:15 p.m.
Continental Ballroom 6
Co-Chairs: Clemens Ostermaier, Infineon Technologies

2:20 PM
20.1 Wide Bandgap (WBG) Power Devices and Their Impacts On Power Delivery Sytems (Invited), A. Huang, NC State University

Wide bandgap (WBG) power semiconductor devices have the capability to reach higher voltage, higher frequency and higher temperature compared with silicon based power devices. These capabilities have the potentials to revolutionize the way we deliver and manage power in the future. This paper reviews the WBG progress and their potential transformative impacts on low voltage, medium voltage and high voltage power delivery systems.

2:45 PM
20.2 Si, SiC and GaN Power Devices: An Unbiased View on Key Performance Indicators (Invited), G. Deboy, M. Treu, O. Haeberlen and D. Neumayr*, Infineon Technologies Austria AG, *ETH Zurich

This paper discusses key parameters such as capacitances & switching losses for silicon, SiC and GaN power devices with respect to applications in switch mode power supplies. Whereas wide bandgap devices deliver roughly one order of magnitude lower charges stored in the output capacitance, the energy equivalent is nearly on par with latest generation Superjunction devices. Silicon devices will hence prevail in classic hard switching applications at moderate switching frequencies whereas SiC and GaN based power devices will play to their full benefits in resonant topologies at moderate to high switching frequencies.

3:10 PM
20.3 System Level Impact of GaN Power Devices in Server Architectures (Invited), A. Lidow, J. Glaser and D. Reusch, Efficient Power Conversion

Gallium Nitride (GaN) integrated circuits and discrete transistors give the power system engineer a new set of tools for improving efficiency, cost, and power density in server and telecom systems. In this paper we examine the new benchmarks in performance as well as the various tradeoffs involved in designing power systems that take an input of 48 V and deliver it to the final destination – a 1 V digital load.

3:35 PM
20.4 GaN-based Semiconductor Devices for Future Power Switching Systems (Invited), H. Ishida, R. Kajitani, Y. Kinoshita, H. Umeda, S. Ujita, M. Ogawa, K. Tanaka, T. Morita, S. Tamura, M. Ishida and T. Ueda, Panasonic Corporation

Current status of GaN-based Gate Injection Transistors (GITs) with p-type gate on AlGaN/GaN hetero structure and their application to power switching systems such as DC/DC converter ICs, together with methodologies for reducing on-resistance, increasing breakdown voltage, and suppressing current collapse are summarized.

4:00 PM
20.5 Application Reliability Validation of GaN Power Devices (Invited), S. Bahl, J. Joh, L. Fu, A. Sasikumar, T. Chatterjee and S. Pendharkar, Texas Instruments

Standard qualification methodology does not specify product-level testing. We show that it is not sufficient to assure good product-level operation. However, by adding hard-switching testing, we show that devices that pass “qual” but perform poorly in application can be detected. As a result, our devices pass qual and perform well in application.

4:25 PM
20.6 Horizon Beyond Ideal Power Devices (Invited), H. Ohashi, NPERC-J

Inconvenient truth is confronting us when we investigate possibility of the future power electronics and power devices. It is that efficiency of power convertor is approaching to full percentage. Change of target in power electronics progress is discussed from efficiency to prevalence of the efficient use of electrical energy. Standing on this viewpoint, new concept, nega-watt cost is proposed. In term of the nega-watt cost, role of advanced power devices are discussed looking at horizon beyond ideal power devices in efficiency.