Session 18: Sensors, MEMS, and BioMEMS Bio and Chemical Sensors
Tuesday, December 5
Imperial Ballroom B
Co-Chairs: Melissa Cowan, Intel
Jin-Woo Han, NASA
18.1 Lab On SkinTM: 3D Monolitically Integrated Zero-Energy Micro/Nanofludics and FD SOI Ion Sensitive FETs for Wearable Multi-Sensing Sweat Applications, F. Bellando, E. Garcia-Cordero, F. Wildhaber*, J. Longo*, H. Guérin* and A.M. Ionescu, Ecole Polytechnique Fédérale de Lausanne, *Xsensio S.A.
We report the full integration of functionalized ISFETs, a miniaturized reference electrode and passive capillary microfluidics in a wearable, ultralow-power wearable device for continuous real-time monitoring of the wearer’s sweat composition. The possibility of selectively sensing specific ions improves the diagnostic capabilities.
18.2 Skin-like Nanostructured Biosensor System for Non-invasive Blood Glucose Monitoring, Y. Chen, S. Lu and X. Feng, Tsinghua University
We present a strategy to design and fabricate a skin-like nanostructured biosensor system. It has nanometer-deposited transducer layer and significant glucose sensitivity. In vivo clinical tests show that the biosensor’s response in non- invasive blood glucose sensing is highly correlated to the clinically invasive blood-taking glucose tests.
18.3 Mechanical-Field-Coupled Thin-Film Transistor for Tactile Sensing with mN Dynamic Force Detection Capability and Wearable Self-Driven Heart Rate Monitoring with µW Power Consumption, W. Li, A. Rasheed, X. Feng, E. Iranmanesh, K. Wang, H. Ou, J. Chen, S. Deng and N. Xu, Sun Yat-sen University
We present a mechanical-filed-coupled thin-film transistor (TFT) intended for mechanical sensor applications. We have demonstrated a tactile sensor with high sensitivity that can detect a gentle dynamic touch down to mN and a wearable piezoelectric self-driven heart rate monitoring device with only µW-range power consumption.
10:20 AM Coffee Break
18.4 Energy-Efficient All Fiber-based Local Body Heat Mapping Circuitry Combining Thermistor and Memristor for Wearable Healthcare Device, H. Bae, W.-G. Kim, H. Park, S.-B. Jeon, S.-H. Jung*, H. Moon Lee*, M.-S. Kim, I.-W. Tcho, B. C. Jang, H. Im, S.-Y. Choi, S. G. Im and Y.-K. Choi, KAIST, *KIMS
This study demonstrated a wearable and flexible temperature sensing circuitry for a diagnosis of skin temperature. This system is based on a novel carbon nanotubes (CNTs)-based temperature sensor (CTS) array, built on cotton yarn using a mixture of multi-walled (MW)-CNTs and PDMS (polydimethylsiloxane). To divide and select the unit thermistors, a memristor which operates in the normally-off state was utilized. To construct the memristors, an Al precursor-based solution dip coating method and initiated chemical vapor deposition (iCVD) were employed for the metal electrode and resistive switching layer (RSL), respectively. Using the aforementioned processes, aluminum (Al) electrode and poly (ethylene glycol methacrylate, pEGDMA)-RSL layers were deposited on a cotton yarn backbone. A unit temperature sensor based on the proposed circuitry was fabricated by intersecting the Al/pEGDMA-coated yarns to both sides of the CTS wire, while forming a 1-thermistor and 2- memristor (1T-2M). This architecture exhibited promising performance as a sensor-array system for a fully fabric-based wearable healthcare device.
18.5 3D Heterogeneous Integrated Monolayer Graphene Si-CMOS RF Gas Sensor Platform, M. Holt, S. M. Mortazavi Zanjani, M. M. Sadeghi and D. Akinwande, The University of Texas at Austin
We report the first monolithically integrated Si-CMOS- monolayer-graphene gas sensor, with a minimal number of post-CMOS processing steps, joining two-dimensional material with low latency, low power, low-cost silicon CMOS (Si-CMOS). Heterogeneous integration of Si-CMOS and 2D materials is a step toward enabling future mobile sensor networks for the Internet of Things.
18.6 Two-Dimensional SnS2 for Detecting Gases Causing “Sick Building Syndrome”, K. Hayashi, M. Kataoka, H. Jippo, M. Ohfuchi, T. Iwai and S. Sato, Fujitsu Laboratories Ltd. Limited
Two-dimensional SnS2-based gas sensors were developed. The sensor can detect HCHO, a gas causing “Sick Building Syndrome,” with concentrations down to 1ppb. Simulations suggest that sulfur vacancies in SnS2 play a crucial role. Actually, oxygen atoms unexpectedly detached from HCHO can fill the vacancies, lowering the Fermi level of SnS2.