Session 16: Optoelectronics, Displays and Imagers Image Sensors and Single-Photon Detectors

Tuesday, December 5
Continental Ballroom 7-9
Co-Chairs: Lindsay Grant, Omnivision Technologies
Toshikatsu Sakai, NHK

9:05 AM
16.1 An Experimental CMOS Photon Detector with 0.5e- RMS Temporal Noise and 15µm pitch Active Sensor Pixels, T. Nishihara, M. Matsumura, T. Imoto, K. Okumura, Y. Sakano, Y. Yorikado, Y. Tashiro, H. Wakabayashi, Y. Oike and Y. Nitta, Sony Semiconductor Solutions Corporation

This is the first reported non-electron-multiplying CMOS Image Sensor (CIS) photon-detector for replacing Photo Multiplier Tubes (PMT). 15µm pitch active sensor pixels with complete charge transfer and readout noise of 0.5 e- RMS are arrayed and their digital outputs are summed to detect micro light pulses. Successful proof of radiation counting is demonstrated.

9:30 AM
16.2 SOI monolithic pixel technology for radiation image sensor (Invited), Y. Arai, T. Miyoshi and I. Kurachi, High Energy Accelerator Research Organization (KEK)

SOI pixel technology is developed to realize monolithic radiation imaging device. Issues of the back-gate effect, coupling between sensors and circuits, and the TID effect have been solved by introducing a middle Si layer. A small pixel size is achieved by using the PMOS and NMOS active merge technique.

9:55 AM
16.3 Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip, H. Oka, K. Inoue, T. T. Nguyen*, S. Kuroki*, T. Hosoi, T. Shimura and H. Watanabe, Osaka University, *Hiroshima University

Back-side illuminated single-crystalline GeSn photodiode array has been demonstrated on a quartz substrate for group-IV-based NIR imager chip. Owing to high crystalline quality of GeSn array formed by laser-induced liquid-phase crystallization technique, significantly enhanced NIR photoresponse with high responsivity of 1.3 A/W was achieved operated under back-side illumination.

10:20 AM Coffee Break

10:45 AM
16.4 Near-infrared Sensitivity Enhancement of a Back-illuminated Complementary Metal Oxide Semiconductor Image Sensor with a Pyramid Surface for Diffraction Structure, I. Oshiyama, S. Yokogawa, H. Ikeda, Y. Ebiko, T. Hirano, S. Saito, T. Oinoue, Y. Hagimoto, H. Iwamoto, Sony Semiconductor Solutions Corporation

We demonstrated the near-infrared (NIR) sensitivity enhancement of back-illuminated complementary metal oxide semiconductor image sensors (BI-CIS) with a pyramid surface for diffraction (PSD) structures on crystalline silicon and deep trench isolation (DTI). The incident light diffracted on the PSD because of the strong diffraction within the substrate, resulting in a quantum efficiency of more than 30% at 850 nm. By using a special treatment process and DTI structures, without increasing the dark current, the amount of crosstalk to adjacent pixels was decreased, providing resolution equal to that of a flat structure. Testing of the prototype devices revealed that we succeeded in developing unique BI-CIS with high NIR sensitivity.

11:10 AM
16.5 Industrialised SPAD in 40 nm Technology, S. Pellegrini, B. Rae, A. Pingault, D. Golanski*, S. Jouan*, C. Lapeyre** and B. Mamdy*, STMicroelectronics,*TR&D, *CEA-Leti, Minatec

We present the first mature SPAD device in advanced 40 nm technology with dedicated microlenses. A high fill factor >70% is reported with a low DCR median of 50cps at room temperature and a high PDP of 5% at 840nm. This digital node is portable to a 3D stacked technology.

11:35 AM
16.6 A Back-Illuminated 3D-Stacked Single-Photon Avalanche Diode in 45nm CMOS Technology, M.-J. Lee, A. R. Ximenes, P. Padmanabhan, T. J. Wang*, K. C. Huang*, Y. Yamashita*, D. N. Yaung* and E. Charbon, Ecole Polytechnique Fédérale de Lausanne (EPFL), *Taiwan Semiconductor Manufacturing Company (TSMC)

We report on the world’s first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/µm2, a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920nm wavelength range, and timing jitter of 107.7ps at 2.5V excess bias voltage and room temperature. To the best of our knowledge, these are the best results ever reported for any back-illuminated 3D-stacked SPAD technology.