IEDM

2017 IEDM Plenary Awards

The IEDM plenary session on Monday, December 4th is an opportunity to recognize several individuals for their outstanding work and contributions to the field of electron devices. In 2017 the awardees are expected to include:

IEDM Awards

2016 Roger A. Haken Best Student Paper Award

To: Roman Koerner, University of Stuttgart/Philips U-L-M Photonics

For the paper entitled: “The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Direct Zener Tunneling Monolithically Integrated on Si”

IEEE EDS Awards

EDS Paul Rappaport Award

To: Takatoshi Tsujimura, Takeshi Hakii, and Suguru Noda

For the paper entitled: “A Color-Tunable Polychromatic Organic-Light-Emitting-Diode Device With Low Resistive
Intermediate Electrode for Rollto-Roll Manufacturing”

EDS George E. Smith Award

To: Rongming Chu, Yu Cao, Mary Chen, Ray Li, and Daniel Zehnder

For the paper entitled: “An Experimental Demonstration of GaN CMOS Technology”

2017 EDS Education Award

To: Mansun Chan

“For pioneering innovative approaches in electronic engineering education”

2017 EDS J.J. Ebers Award

To: Kang L. Wang

“For contributions and leadership in strained SiGe and magnetic memory technologies”

2017 Distinguished Service Award

To: Paul Yu

“To recognize and honor outstanding service to the Electron Devices Society”

EDS Celebrated Members

To: Gordon Moore and Simon Sze

“For fundamental contributions to the field of electron devices for the benefit of humanity”

2017 IEEE/EDS Fellows

*This is a complete listing of the 2017 IEEE/EDS Fellows. Not all Fellows will be recognized at the 2017 IEDM.

Hugh Barnaby, Arizona State University, Tempe, Arizona, USA
Yu Cao, Arizona State University, Tempe, Arizona, USA
Edoardo Charbon, Delft University of Technology, Delft, Netherlands
Wei-ting Chien, SMIC-Semiconductor Mfg. Int’l Corp., Shanghai, China
Terry Ericsen, Ericsen Innovations LLC, Annapolis, Maryland, USA
Christopher Hierold, Swiss Federal Institute of Technology, Zurich, Switzerland
Ru Huang, Peking University, Beijing, China
Tian-wei Huang, National Taiwan University, Taipei, Taiwan
Chia-hong Jan, Intel Corporation, Portland, Oregon, USA
Quanxi Jia, University of Buffalo, Buffalo, New York, USA
Hongrui Jiang, University of Wisconsin, Madison, Wisconsin, USA
Richard King, Arizona State University, Tempe, Arizona, USA
Hulya Kirkici, Auburn University, Auburn, Alabama, USA
Steven Koester, University of Minnesota, Minneapolis, Minnesota, USA
Xiuling Li, University of Illinois, Champaign, Illinois, USA
Donald Lie, Texas Tech University, Lubbock, Texas, USA
Theresa Mayer, Virginia Tech, Blacksburg, Virginia, USA
Junichi Nakamura, Brillnics Japan Inc., Tokyo, Japan
Borivoje Nikolic, University of California, Berkeley, California, USA
Akihiro Nitayama, Tohoku University, Sendai, Japan
Tomas Palacios, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
Dimitrios Peroulis, Purdue University, West Lafayette, Indiana, USA
Ramgopal Raovalipe, Indian Institute of Technology, Powai, Mumbai, India
Akira Toriumi (2016), University of Tokyo, Japan
Andrei Vladimirescu, Berkeley Wireless Research Center, Berkeley, California, USA
Sorin Voinigescu, University of Toronto, Toronto, Ontario, Canada
Xin Zhang, Boston University, Boston, Massuchusetts, USA