Magnetics Society events at IEDM 2017
Sponsored by the IEEE Magnetics Society
A special poster session dedicated to MRAM
With the rising interest of the microelectronics industry in STT-MRAM, it is very important to strengthen the relationship between the microelectronics and magnetism communities in order to accelerate the development of this new hybrid technology. For that, a special poster session entirely dedicated to MRAM (MRAM materials/phenomena/ technology/testing, hybrid CMOS/MTJ technology and circuits, spin-logic) is organized during IEDM. A similar MRAM poster session took place at IEDM 2016 and was very successful with 33 posters presented and very active cross-disciplinary discussions. This session will be technically organized by the IEEE Magnetics Society and will be embedded in the IEDM 2017 conference. It will appear as a special MRAM poster session in the IEDM program (http://ieee-iedm.org/program/). The posters will be selected by a small international program committee formed by members of the IEEE Magnetics Society. There will be no publications associated with these posters in the Proceedings of IEDM.
To present a poster during the MRAM poster session at IEDM2017, send a half page abstract to firstname.lastname@example.org before 26 September 2017. In the list of authors, underline who will be the presenting author. The notice of acceptance/rejection will be sent by mid-October. Participants in this poster session will need to register at IEDM as regular attendees. More information can be found at http://www.ieeemagnetics.org/
9th MRAM Global Innovation Forum, Thursday, December 7th
To strengthen the relationship between the microelectronics and magnetism communities in order to accelerate the development of MRAM technology, a MRAM Forum is organized by the IEEE Magnetics Society the day following IEDM to allow IEDM attendees to participate. This will be the 9th MRAM Global Innovation Forum. This is a one-day forum organized on 7 December 2017 (8:45am – 5:30pm) in the same hotel as IEDM (Hilton Union Square, 333 O’Farrell St, San Francisco). The Forum will consist of 10 invited talks from leading experts and a panel discussion. Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, spin orbit torque MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 9th edition of the series.
The registration to the Forum will be free of charge, including free lunch. However the number of attendees will be limited. To register to the Forum, send an email to email@example.com with first name, last name, contact email, affiliation. A confirmation email will be sent to you. The deadline for registration will be 3rd November 2017. More information can be found at http://www.ieeemagnetics.org/
Bernard DIENY and Bruce TERRIS
IEEE Magnetics Society