Magnetics Society events at IEDM 2019

Technically sponsored by the IEEE Magnetics Society

Two IEEE Magnetics Society events at IEDM 2019

With the rising interest of the microelectronics industry in STT-MRAM, it is very important to strengthen the relationship between the microelectronics and magnetism communities since this technology requires expertizes from both areas. For that, two special events related to MRAM technology are being organized around IEDM by the IEEE Magnetics Society with the particular help of the program committee formed of D. Worledge (Program chair), B. Dieny (General chair), L. Thomas, K.J. Lee, S. Fukami, J. Katine, K. Gao and of P. Mahoney and J.A. Incorvia for the logistics.

1) A special poster session dedicated to MRAM
(Wednesday 11 December 2019, 9am-Noon, YOSEMITE Ballroom)

Various topics will be covered including MRAM materials, phenomena, technology, testing, hybrid CMOS/MTJ technology and circuits, spin-logic.  Similar MRAM poster sessions took place at IEDM 2016 and IEDM2017 which were very successful with more than 30 posters presented and very active cross-disciplinary discussions. This year, 30 posters were accepted for presentation. This session is technically organized by the IEEE Magnetics Society. This event is a great opportunity to bring together experts in magnetism and in microelectronics. Participants in this poster session need to register at IEDM as regular attendees. More information including the list of presented posters are posted on the IEEE Magnetics Society website

2) The 11th MRAM Global Innovation Forum
(Hilton Union Square, IMPERIAL Ballroom), 12 Dec 2019

This is a one-day forum organized the day following IEDM (i.e on 12 December 2019, 8:45am – 5:30pm) in the same hotel as IEDM (Hilton Union Square, 333 O’Farrell St, San Francisco). The Forum will consist of 10 invited talks from leading experts and a panel discussion on “MRAM for AI”.  Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, spin orbit torque MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 11th edition of the series.

The Forum is entirely supported by Samsung Semiconductor and IEEE Magnetics Society. The registration to the Forum is free of charge. To register to the Forum, send an email to with first name, last name, contact email, affiliation. A confirmation email will be sent to you. The deadline for registering to the Forum is 15th November 2019.

More information including the Forum program is posted on the IEEE Magnetics Society website