IEDM

Welcome to the Editor Press Center. The following press materials may be downloaded from this site for news coverage of the 2020 IEDM.

Chris Burke
co-Media Relations Director
1 919 872 8172
chris.burke@btbmarketing.com

Gary Dagastine
co-Media Relations Director
+1 518 785 2724
gdagastine@nycap.rr.com

Welcome to the Editor Press Center. Check back periodically for photo and caption updates. The following press materials may be downloaded from this site for news coverage of the IEDM:

San Francisco, CA image (JPEG)
2020 66th IEDM Logo (JPG)

2020 IEDM Photos with captions:
Selected images from the abstracts are presented in two formats:
– Word file with images associated with a highlighted paper and the caption
– JPEG file with individual high-resolution Images

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Paper 3.1, Understanding Variability in Scaled MoS2 Transistors, imec
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Paper 4.1, “Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction Comparison to Experiment and Performance Projection”, N. Yang et al, Univ. Florida
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Paper 5.2, “Demonstration of a ~40kV Si Vacuum Transistor as a Practical High Frequency and Power Device,” W. Chern et al, MIT
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Paper 5.4, “5kV Multi-Channel AlGaN-GaN Power Schottky Barrier Diodes with Junction-Fin-Anode,” M. Xiao et al, Virginia Polytechnic
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Paper 7.2, “Single-Chip Beam Scanner with Integrated Light Source for Real-Time Light Detection and Ranging,” J. Lee et al, Samsung
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Paper 8.3, “GaN-AlN p-Channel HFETs with Imax 420 mA-mm and ~20GHz fT-fMAX,” K. Nomoto et al, Cornell University
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Paper 14.6, “Nanophotonic Sensor Implants with 3D Hybrid Periodic-Amorphous Photonic Crystals for Wide-Angle Monitoring of Long-Term In-Vivo Intraocular Pressure,” R. Siddique et al, Samsung
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Paper 15.1, “A High-Density Logic-on-Logic 3DIC Design Using Face-to-Face Hybrid Wafer-Bonding on 12nm FinFET Process,” S. Sinha et al, Arm-GLOBALFOUNDRIES
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Paper 16.2, “A 0.8μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance,” Y. Oh et al, Samsung
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Paper 17.5, “Organic Package Substrates Using Lithographic Via Technology for RF to THz Applications,” A. Aleksov et al, Intel-MIT
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Paper 20.6, “3-D Self-Aligned Stacked NMOS-on-PMOS Nanoribbon Transistors for Continued Moore’s Law Scaling,” C.-Y. Huang et al, Intel
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Paper 24.2, “High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications,” F. Arnaud et al, STMicroelectronics-CEA-Leti
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Paper 28.1, “Anti-Ferroelectric HfxZr1-xO2 Capacitors for High-Density 3-D Embedded-DRAM,” S-C Chang et al, Intel
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Paper 31.1, “Reliability and Performance of CMOS-Compatible Multi-Level Graphene Interconnects Incorporating Vias,” K. Agashiwala et al, Univ. California-Santa Barbara
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Paper 33.1, “Low Power Consumption and High Resolution 1280×960 Gate-Assisted Photonic Demodulator Pixel for Indirect Time-of-Flight,” Y. Ebiko et al, Sony
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Paper 35.5, “Large-Area Manufacturable Active Matrix Digital Microfluidics Platform for High-Throughput Biosample Handling,” H. Ma et al, Suzhou Institute
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Paper 38.3, “A Flexible 300mm Integrated Si MOS Platform for Electron- and Hole-Spin Qubits Exploration,” R. Li et al, imec-KU Leuven
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Paper 39.3, “Novel Concept of Hardware Security Using Gate-switching FinFET Nonvolatile Memory to Implement True-Random-Number Generator,” W. Yang et al, National Chiao Tung University
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ATTENDANCE AT IEDM IS COMPLIMENTARY FOR THE PRESS.
If you plan to attend, please let us know. Also, the conference organizers are planning to have a online press briefing prior to the IEDM to discuss the most interesting papers and the major technology trends evident in this year’s program. We encourage journalists to attend it, and details will be provided in November.

Whether you would like to do a news story, conference preview or an in-depth exploration of a particular technology, please contact one of us for the additional information or interviews you may need.

Editor Contacts:
Gary Dagastine, co-Media Relations Director, at gdagastine@nycap.rr.com or by telephone at +1 518 785 2724
Chris Burke, co-Media Relations Director, at chris.burke@btbmarketing.com or by telephone at +1 919 872 8172

Registration/attendance questions:
Can be answered by the Conference Manager Phyllis Mahoney, at phyllism@widerkehr.com or by telephone at +1 240 449 6746. 8512 Fountain Valley Dr., Montgomery Village, MD 20886 USA

ABOUT IEDM
IEEE International Electron Devices Meeting (IEDM) is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electron-device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. The conference scope not only encompasses devices in silicon, compound, and organic semiconductors, but also emerging material systems.

The IEEE Electron Devices Society is dedicated to promoting excellence in the field of electron devices, and sponsors the IEDM. Learn more at ieee-iedm.org.