Papers are solicited in the areas of CMOS platform technology, logic circuit design challenges, advanced node process integration schemes, process module advancements and process control techniques, and device technology co-optimization solutions. Platform technologies include the state-of-art Si technologies, beyond Si channel such as SiGe/Ge, and advanced device technologies such as GAA nanowire and stacked nanosheet. Topics include device, interconnects and circuit performance, scaling issues and PPA analysis. Papers may address process development and module integration for heterogeneous channel materials, substrate and isolation technologies, shallow junctions, gate stacks, contacts, interconnects, stacked and monolithic 3D, packaging, chiplet, BEOL-compatible transistors and variability reduction. Submission of papers discussing interactions between advanced technology and design issues such as variability, aging, power constraints, physical layout effects and DTCO solutions is encouraged.
Papers are solicited on emerging nanoelectronic devices and physics. This includes devices based on novel transport mechanisms such as tunnel FET, negative capacitance FET, topological insulators, phase transitions, and quantum effects. Devices based on low‐dimensional systems including 2D materials, nanowires, and quantum dots are welcomed. Neuromorphic and approximate computing devices as well as non-charge-based logic such as magnetic logic, and spintronics are key topics. Furthermore, emerging state machines, continuous time dynamical systems, and lifelong learning machines are also of interest. Qubit devices as well as devices and systems designed to enable quantum computing and quantum simulation are of high interest. Papers in EDT focus primarily on device physics, innovative transistor structures, and novel concepts; more mature “platform candidate” papers should be submitted to ALT. Reliability assessment of emerging devices are also solicited here, while such assessments for more mature technologies/devices should be submitted to RSD.
Papers are solicited in all memory technology topics, including embedded and standalone memories, as well as computing-in-memory, machine learning applications. Topics span from novel concept cells to fully integrated memories, from prototyping to manufacturing issues and performance. Specific areas of interest include both conventional and novel memory cells including charge-based memories, ReRAM, MRAM, PCRAM, FeRAM, crosspoint and selectors, organic memory and NEMS‐based devices, including their design and scaling, processing, reliability, and modeling. Novel concepts and demonstrations that enhance memory properties or apply to AI computing paradigms are of interest. Higher-level topics include 3D architectures and integration, novel read/program/erase schemes, solid state drive (SSD) applications, novel hierarchies and architectures for memory-centric systems, security, computing-in-memory and nonvolatile memory-enabled applications.
Papers are solicited in the areas of high-frequency device technology, device physics, packaging technology, and high-frequency circuit applications in the micro, mm-wave and THz frequency spectrum. Device processes of interest include Si-based RF CMOS, such as FD-SOI and FinFET processes and SiGe HBTs. Compound semiconductors including InP/InGaAs/GaAs III-V HEMTs, FETs, DHBTs, mm-wave Schottkys and other microwave-enabling devices are also of key interest, as well as AlGaN/InGaN/GaN processes and devices optimized for RF performance. Other wide bandgap and organic RF-compatible devices and processes are also of interest. The area also includes passive devices implementing tunable passives, microwave and mm-wave switches and SAW/BAW filters. 3D and heterogeneous integration, chip-and-wafer level packaging and assembly, and thermal management, as well as basic RF-device modeling and reliability aspects are also covered. The circuit aspects covers analog front ends for 5G and beyond, mixers, transceivers, filters, beam formers, switches, LNAs, PAs, tunable passives, antenna arrays, as well as mixed signal implementations in the micro and mm-wave domain. Devices and circuits for RF energy harvesting, and RF device and circuit interaction are also a good fit.
Papers are solicited in the areas of analytical, numerical, and statistical approaches to model electronic and other domain’s device components and physical phenomena. Topics include physics-based compact and TCAD models for transistors, memories and interconnects; the modeling and emulation of IC fabrication processes and equipment; atomistic-scale material modeling; circuit design-oriented modeling of variability, reliability and yield issues; 3D integration and advanced packaging models. Other beyond-CMOS topics include alternative computing schemes (e.g. neuromorphic, stochastic, approximate and quantum computing), spintronics, photonics and electro-chemical/mechanical device modeling. Submissions should advance the state-of-the-art in modeling and simulation methodology or apply existing techniques to gain new insights into device behaviors.
Papers are solicited on optoelectronics, displays, and imaging systems. This includes novel devices, structures, and integration for image sensors, displays, light sources, photonic devices, and high-speed photodetectors and modulators. New technologies on heterogeneous integration of opto-electronics as well as on photonic-electronic integration for optical interconnects, on-chip networks and sensing are welcomed. Papers on quantum photonics and plasmonics for computation, sensing and encryption are also of interest. Furthermore, ODI includes CMOS imagers, high-speed and high-time resolution imagers, CCDs, stacked image sensors, and displays of all types. In addition, papers on TFTs, flexible, stretchable, and/or printed electronics are encouraged. Papers on CMOS integration of thin film electronics for non-optical applications should be submitted to ALT. We particularly welcome submissions concerning optoelectronic devices for neuromorphic and quantum computing, as well as VCSEL sensors, micro LED, and flexible displays
Papers are solicited on discrete and integrated power devices, modules and systems using Si, diamond, and compound semiconductors. Papers exploring the system-level impact of power devices are also of interest. Topics of interest include device architectures (diodes, BJTs, FETs, superjunction devices, IGBTs, HEMTs, etc.), and materials (Si, diamond, SiC, GaAs, GaN, AlN, Ga2O3, etc.) for power applications, in addition to manufacturing processes, device design, TCAD and physical modeling (compact modeling should be submitted to MS), fundamental physical effects, and reliability. Devices targeting the full range of power and power conversion applications, including automotive, power supplies for computers and data centers, power conditioners for photovoltaic, motor drives and smart grid (solid-state transformers and HVDC transmission), and wireless power transfer, are of interest besides fundamental studies on doping, deep-level traps, interface state densities and device reliability for power switching devices.
Papers are solicited in all areas of electrical and physical characterization, reliability evaluation and yield analysis of transistors, interconnects, circuits and systems mainly (but not limited) to Si-based technologies. Specific reliability topics include, for FEOL: transistor degradation due to hot carriers and bias temperature instabilities; dielectric wear‐out and breakdown; self-heating effects; process charging damage; latch‐up and ESD; soft error mechanisms in logic and memories. For MEOL/BEOL, topics include: electromigration failure of contacts and interconnects; breakdown of BEOL dielectrics and MEOL spacers; thermal management. For system and circuit reliability topics include: design for reliability and variability-aware design, robustness and security of electronic circuits and systems. Of particular interest are investigations of degradation mechanisms for devices, circuits and systems in the following area: 5G; IOT; emerging memories; more-than-Moore applications; biomedical devices and systems; wearable electronics; automotive and aerospace. Reliability assessment of mature memory technologies/devices should be submitted to MT.
Papers are solicited in the areas of sensors, micro/nano electromechanical systems (MEMS and NEMS), microfluidics and BioMEMS, with particular emphasis on new device concepts, integrated implementations, CMOS co-integration, flexible devices and multi-sensors on a chip for wearable and IoT applications. Sensors area includes chemical, molecular and biological detection based on electrical, electrochemical, mechanical and optical principles. Topics of interest in the MEMS area include actuators, physical sensors, resonators, integrated inertial measurement units, RF MEMS, micro-optical and optomechanical devices, micro power generators, MEMS devices for energy harvesting and on-chip energy storage as well as micro/nanofluidics for thermal management. BioMEMS area covers organic‐inorganic hybrid devices, bio‐electronic interface, integrated biomedical sensing and implantable neural interfaces.