Topics of Interest

Papers in the following areas are requested.

Membership details for each of the subcommittees can be found here.


Papers are solicited in the areas of CMOS platform technology, circuit design challenges in emerging technologies, and device technology interactions. Platform technologies include III-Vs, SiGe/Ge, and other underlying technologies for the “next node” (N+1). Topics also include digital and analog device and circuit performance and scaling issues, technology-design co-optimization, power-performance-area analysis, the impact of future device structures on circuit design, circuit and architectural implications of interconnect technology and performance, manufacturability issues such as design for manufacturability and process control, and emerging circuit design and technology concepts, including neuromorphic and non-von Neumann circuit approaches. Submission of papers discussing interactions between advanced device technology and design issues such as variability, power constraints, physical layout effects and design complexity in memory, logic, analog, and mixed-signal circuits is encouraged.


Papers are solicited in all areas of characterization, yield, and reliability, at both the front‐end and back‐end of the process. Topics include hot carriers, dielectric wear‐out and breakdown, process charging damage, latch‐up, ESD, soft errors, noise and mismatch behavior, variability/reliability interaction and time dependent variability, bias temperature instabilities, and thermal modeling at the device, circuit, and packaging level for memory, logic, analog, and novel device technologies. Other topics include interconnect reliability, electromigration, the impact of back‐end processing on devices, chip‐ package interaction, physics of failure analysis, and novel characterization techniques.

Compound Semiconductor and High Speed Devices (CHS)

Papers are solicited in the areas of compound semiconductor electronic devices and high-speed device technologies based on GaAs, InGaAs, InP, GaN, SiGe, Antimonides and their related alloys. Devices of interest include III‐V MOS devices, ballistic devices, HBTs (III-V and group IV) and HEMTs, RF/microwave/millimeter‐wave devices, SAW/BAW devices, and active and passive electron devices for analog applications. Topics include device physics, design, modeling, reliability and manufacturing processes.


Papers are solicited covering all memory related technology topics, including devices for neuromorphic computing applications. Topics span the full range from novel cell concepts to fully integrated memories and manufacturing issues. Areas of interest include cell design and scaling, processing, reliability, and modeling for both volatile and nonvolatile memories, as well as conventional and novel memory cells including ReRAM, STT‐MRAM, PCRAM, FeRAM, crosspoint and selectors, organic memory and NEMS‐based devices. Devices and physics of memristors and other device concepts that support neural computing paradigms are also of interest. Higher level topics include array optimization, 3D architectures, novel read/program/erase schemes, solid state drive (SSD) applications, novel hierarchies and architectures for memory-centric systems, security, computing-in-memory and disruptive non‐volatile memory-enabled emerging logic applications.


Papers are solicited in the areas of analytical, numerical, and statistical approaches to modeling electronic, optical, and hybrid devices (including sensors), and their isolation and interconnection. Topics include physical and compact models for devices and interconnects, modeling of fabrication processes and equipment, material modeling, process characterization, parameter extraction, early compact models for advanced technologies and novel devices, performance evaluation, design for manufacturing, reliability, variability, and technology benchmarking methodologies. Other topics of interest include the modeling of interactions between process, device, circuit, and packaging technology. Submissions should advance the art of modeling and simulation or apply existing techniques to gain new insights into devices.


Papers are solicited on novel solid state and nanoelectronic devices and concepts. This includes devices based on novel transport mechanisms such as tunnel FETs and other steep-slope devices, molecular devices, and emerging concepts for devices based on topological insulators, phase transitions, quantum effects, and non‐von Neumann devices. Non‐charge based logic, magnetic logic, spintronics, plasmonics and quantum computing are also of interest. Furthermore, nanoelectronic devices based on low‐dimensional systems are encouraged, including 2D materials, nanowires, nanotubes and quantum dots. Subsets of key topics include electron device physics, technology scaling issues, as well as novel transistor structures. Papers in NDT focus primarily on device physics and novel concepts; more mature “platform candidate” papers should be submitted to CDI.


Papers are solicited on devices, structures, and integration for optoelectronics, photonics, displays, and imaging systems. Optoelectronic devices include photovoltaics, photonic bandgap structures and crystals, LEDs and lasers, as well as optoelectronic and photonic integrated circuits and optical interconnects. Papers on quantum photonics and photonic qubits for quantum computation are also of interest. Displays and imaging area topics include CMOS imagers, high‐speed imagers, CCDs, TFTs, organic, amorphous, and polycrystalline devices, as well as emissive and reflective displays. Submission of papers addressing flexible and/or stretchable electronics, printed electronics, stacked image sensors with Si or other photosensitive materials, organic and inorganic displays, and covering new technology trends in imagers and displays are encouraged. Other relevant subjects include device/circuit design, fabrication, reliability, theory, and modeling.


Papers are solicited on discrete and integrated power devices and modules using Si, diamond, and compound semiconductors. Papers exploring the system-level impact of power devices are also of interest. Topics of interest include power devices (FETs, superjunction devices, IGBTs, etc.), and materials (Si, SiC, GaN, Diamond, GaAs, AlN, Ga2O3, etc.), manufacturing processes, device design, modeling, physics, and reliability. Devices targeting the full range of power and power conversion applications, including hybrid vehicles, power supplies for computer and telecom, motor drives, utility and grid control, and wireless power transfer, are of interest.


Papers are requested on innovations in individual process modules, process integration schemes, and process control techniques that enable improved device or circuit performance or enable new functionality. Examples of front‐end process topics include substrate and isolation technologies, new transistor materials, integration of heterogeneous channel materials, multi-patterning and EUV lithography, self‐assembly techniques, deposition and etch techniques, novel dielectrics and metal electrodes for transistor gate stacks and MIM capacitors, shallow junctions, and silicides. Examples of back‐end process topics include conductor systems, low dielectric constant materials, contact and via processes, barrier materials, planarization, integration considerations for multi-level interconnects, photonics‐electronics integration on CMOS, and advanced packaging. Also of interest are topics like emerging process modules, 3D integration, additive manufacturing for microelectronics, processes and tools designed to reduce variance, defect reduction in heterogeneous material systems, novel techniques for enhancing process control and stability.


Papers are solicited in the area of sensors, sensor networks, micro electromechanical systems (MEMS), BioMEMS, microfluidic as well as NEMS devices. The sensors area includes TFT‐based sensors and sensors for chemical, molecular, and biological detection including electrochemical, mechanical and optical sensors. Topics of interest in the MEMS and BioMEMS area include resonators and resonant sensors, RF MEMS, integrated inertial measurement units, integrated biomedical sensing, integrated sensors and actuators, micro-optical devices, microfluidic and bio‐electronic devices inspired or enabled by biomimetic structures, micro power generators, mechanical energy harvesting devices, opto-fluidic devices, and organic‐inorganic hybrid‐devices, with particular emphasis on new device concepts, integrated implementations, wearables, and complete sensor systems and networks.