Papers are solicited in the areas of CMOS platform technology, logic circuit design challenges, advanced node process integration schemes, process module advancements and process control techniques, and device technology co-optimization solutions. Platform technologies include the state-of-art Si technologies, beyond Si channel such as SiGe/Ge, and advanced device technologies such as Gate-All-Around nanowire and stacked nanosheet are of strong interest. Topics include device and circuit performance and scaling approaches, power-performance-area analysis, and architectural implications of interconnect technology and performance. Papers addressing process integration of heterogeneous channel materials, substrate and isolation technologies, shallow junctions, novel dielectrics and metal electrodes for gate stacks, contact and via processes, interconnect bottleneck, sequential monolithic 3D, heterogeneous chiplets, advanced packaging, and BEOL compatible transistors are solicited. Process module advancements in EUV lithography, deposition, planarization, etch and self‐assembly techniques; and process control topics include defect detection as well as novel techniques for variability reduction are of interest. Submission of papers discussing interactions between advanced device technology and circuit design issues such as variability, aging, power constraints, physical layout effects, yield implication and DTCO solutions is highly encouraged.
Papers are solicited on novel devices and concepts that enhance existing or novel computing models. This includes devices based on novel transport mechanisms such as tunnel FET, negative capacitance FET, topological insulators, phase transitions, and Qubit devices. Devices based on low‐dimensional systems including 2D materials, nanowires, and quantum dots are welcomed. Neuromorphic and approximate computing devices as well as non-charge-based logic such as magnetic logic, spintronics, and plasmonics are key topics. Submission on Cryo-CMOS for quantum computing enablement and high-performance computing is solicited. Furthermore, emerging state machines, continuous time dynamical systems, and lifelong learning machines are also of interest. Papers in EDT focus primarily on device physics, innovative transistor structures, and novel computing concepts; more mature “platform candidate” papers should be submitted to ALT. Reliability assessment of novel devices are also solicited here, while that for more mature technologies/devices should be submitted to RSD.
Papers are solicited in all memory technology topics, including embedded and standalone memories, as well as computing-in-memory and neuromorphic computing applications. Topics span from novel concept cells to fully integrated memories, from prototyping to manufacturing issues and performance. Specific areas of interest include both conventional and novel memory cells including charge-based memories, ReRAM, MRAM, PCRAM, FeRAM, crosspoint and selectors, organic memory and NEMS‐based devices, including their design and scaling, processing, reliability, and modeling. Novel concepts and demonstrations that enhance memory properties or apply to bio-inspired computing paradigms are of interest. Higher-level topics include 3D architectures and integration, novel read/program/erase schemes, solid state drive (SSD) applications, novel hierarchies and architectures for memory-centric systems, security, computing-in-memory and nonvolatile memory-enabled applications.
Papers are solicited in the areas of high frequency device technology, device physics and high frequency circuit applications in the micro, mm-wave and THz frequency spectrum. Device processes of interest include Si-based RF CMOS, such as FD-SOI and FinFET processes and SiGe HBTs. Compound semiconductors including InP/InGaAs/GaAs III-V HEMTs, FETs, DHBTs, mm-wave Schottkys and other microwave-enabling devices are also of key interest, as well as AlGaN/InGaN/GaN processes and devices optimized for RF performance. Other wide bandgap and organic RF-compatible devices and processes are also of interest. The area also includes passive devices implementing tunable passives, microwave and mm-wave switches and SAW/BAW filters. Basic RF-device modeling and reliability aspects are also covered. The circuit aspects covers analog front ends for 5G and beyond, mixers, transceivers, filters, beam formers, switches, LNAs, PAs, tunable passives, antenna arrays, as well as mixed signal implementations in the micro and mm-wave domain. Devices and circuits for RF energy harvesting are also a good fit.
Papers are solicited in the areas of analytical, numerical, and statistical approaches to model electronic, optical, and hybrid devices including sensors and interconnects. Topics include physical and compact models for semiconductor and novel devices, the modeling of interconnects, the modeling and emulation of fabrication processes and equipment, atomistic material modeling, parameter extraction, compact models for advanced and novel technologies, performance benchmarking, and the modeling of reliability and variability mechanisms. Other topics include the modeling of novel computing approaches (e.g. neuromorphic and quantum computing) and the modeling of interactions between process, device, circuit, and packaging including thermal, mechanical, and electromagnetic effects. Submissions should advance the state-of-the-art in modeling and simulation or apply existing techniques to gain new insights into device behavior.
Papers are solicited on devices, structures, and integration for optoelectronics, displays, and imaging systems. Optoelectronics focus is on photonic-electronic process integration schemes and devices advancing the state-of-the-art. There is particular interest in platform technologies enabling energy efficient scaling of optoelectronic applications such as silicon photonics towards and beyond 100Gbaud, including novel approaches to the integration of light sources, high speed modulators and photodetectors. Furthermore, papers are solicited in the area of large-scale heterogeneous integration of electronic and photonic circuits for optical interconnects, on-chip networks and sensing. Papers on quantum photonics for computation, sensing and encryption are also of interest. Displays and imagers include CMOS imagers, high speed and high time-resolution imagers, CCDs, TFTs, organic, amorphous, and polycrystalline devices, as well as emissive and reflective displays. Papers addressing flexible and/or stretchable electronics, printed electronics, stacked image sensors with Si or other photosensitive materials, organic and inorganic displays, and covering new technology trends in imagers and displays are encouraged. Papers concerning optoelectronic integration for neuromorphic and quantum computing, as well as VCSEL/micro LED display applications are welcomed.
Papers are solicited on discrete and integrated power devices, modules and systems using Si, diamond, and compound semiconductors. Papers exploring the system-level impact of power devices are also of interest. Topics of interest include power devices (diodes, BJTs, FETs, superjunction devices, IGBTs, etc.), and materials (Si, diamond, SiC, GaAs, GaN, AlN, Ga2O3, etc.), manufacturing processes, device design, TCAD modeling, physics, and reliability. Devices targeting the full range of power and power conversion applications, including automotive, power supplies for computers and data centers, power conditioners for photovoltaic, motor drives and smart grid (solid-state transformers and HVDC transmission), and wireless power transfer, are of interest besides fundamental studies on doping, deep-level traps, interface state densities and device reliability for power switches.
Papers are solicited in all areas of electrical and physical characterization, reliability evaluation and yield analysis of transistors, interconnects, circuits and systems mainly (but not limited) to Si-, Ge- and SiGe-based technologies. Specific reliability topics include, for FEOL: transistor degradation due to hot carriers and bias temperature instabilities; dielectric wear‐out and breakdown; self-heating effects; process charging damage; latch‐up and ESD; soft error mechanisms in logic and memories. For MEOL/BEOL, topics include: electromigration failure of contacts and interconnects; breakdown of BEOL dielectrics and MEOL spacers; thermal management. For system and circuit reliability, topics include: design for reliability and variability-aware design, robustness and security of electronic circuits and systems. Of particular interest are investigations of degradation mechanisms for devices, circuits and systems in the following areas: emerging memories; More-than-Moore applications; biomedical devices and systems; automotive and aerospace.
Papers are solicited in the areas of sensors, micro/nano electromechanical systems (MEMS and NEMS), microfluidics and bioelectronics, with particular emphasis on new device concepts, integrated implementations, CMOS co-integration, flexible devices and multi-sensors on a chip for wearable and IoT applications. The sensors area includes chemical, molecular and biological detection based on electrical, electrochemical, mechanical and optical principles. Topics of interest in the MEMS area include actuators, physical sensors, resonators, integrated inertial measurement units, RF MEMS, micro-optical and optomechanical devices, micro power generators, devices for energy harvesting and on-chip energy storage as well as micro/nanofluidics for thermal management. The Bioelectronics area covers organic‐inorganic hybrid devices, bio‐electronic interface, integrated biomedical sensing and implantable neural interfaces.