2018 IEDM Program

To access the pdf of the IEDM program  Click here .


Monday — 9:00 am – 12:00 pm

Session 1 — Plenary Session

Monday – 1:30 pm – 5:00 pm

Session 2: Memory TechnologyCharge Based Memories

Session 3: Circuit and Device InteractionDevice and Algorithm Co-design for Neuromorphic and In-memory Computing

Session 4: Sensors, MEMS, and BioMEMSMicro and Nano Electromechanical Systems

Session 5: Focus Session – Characterization, Reliability, and YieldInterconnects to Enable Continued Scaling

Session 6: Focus Session – Nano Device TechnologyQuantum Computing Devices

Session 7: Process and Manufacturing Technology3D Integration and Memory Technologies

Session 8: Power Devices/ Compound Semiconductor and High-Speed DevicesAdvances in Silicon Carbide and Gallium Oxide Silicon Power Devices

Session 9: Modeling and SimulationModeling and Simulation of Negative Capacitance Transistors

Session 10: Optoelectronics, Displays, and ImagersImage Sensors

Monday 6:30 pm – 8:00 pm

Grand Ballroom — RECEPTION

Tuesday – 9:00 am – 12:30 pm

Session 11: Process and Manufacturing TechnologyMaterial and Processes for Advanced Silicon Technologies

Session 12: Sensors, MEMS, and BioMEMSIntegrated Ion and Gas Sensors

Session 13: Nano Device TechnologyNano-Devices for Low-Power Technologies Session 4 NDT

Session 14: Focus Session – Compund Semiconductor and High Speed Devices —  Future Technologies Towards Wireless Communications:  5G and Beyond

Session 15: Circuit and Device InteractionEmerging Devices for Neural Network and IoT

Session 16: Modeling and SimulationAdvanced Modeling of ferroelectric materials and devices

Session 17: Characterization, Reliability, and YieldInnovative Characterizations

Tuesday – 2:15 pm – 5:30 pm

Session 18: Circuit and Device InteractionEmbedded Memory at Advanced CMOS Nodes

Session 19: Focus Session – Power Devices — Challenges for Wide Bandgap Device Adoption in Power Electronics

Session 20: Memory TechnologyRRAM for Neuromorphic Applications

Session 21: Process and Manufacturing TechnologyAdvanced Gate All Around Process

Session 22: Nano Device Technology2D CMOS and Memory Devices

Session 23: Optoelectronics, Displays, and Imagers  — Silicon Photonics

Session 24: Modeling and Simulation — 2D Materials, Modeling, and the Optimization of Beta-Ga2O3 Power Devices

Session 25: Characterization, Reliability, and YieldEmerging Memory Reliability

Tuesday – 8:00 pm – 10:00 pm

Continental 1-5  — Session 26 – IEDM Evening Panel Session

Wednesday – 9:00 am – 12:00 pm

Session 27: Memory TechnologyMRAM & PCRAM

Session 28: Circuit and Device InteractionAdvanced CMOS Technology for Computing in the Nanoscale Era

Session 29: Sensors, MEMS, and BioMEMSBiosensors and Neural Interfaces

Session 30: Power Devices/Compound Semiconductor and High-Speed Devices CommitteeGaN Power Devices

Session 31: Nano Device Technology — NCFET Physics and Devices

Session 32: Optoelectronics, Displays, and ImagersCMOS Photodetectors

Session 33: Modeling and SimulationDevice, Process and Reliability Modeling

Session 34: Characterization, Reliability, and Yield — Advanced Technology Reliability

Wednesday – 1:30 pm – 4:05 pm

Session 35: Process and Manufacturing TechnologyAdvanced Channel and Contact Technologies

Session 36: Nano Device TechnologySpintronic Devices and Applications

Session 37: Memory Technology1S1R Arrays and Select Devices

Session 38: Optoelectronics, Displays, and Imagers —  Displays, TFTs, and Optical Synapses

Session 39: Compound Semiconductor and High Speed DevicesHigh Performance III-V Devices and Technology Towards 5G

Session 40: Modeling and SimulationSimulation and Modeling of Advanced Process and Emerging Memory