Call for Papers Overview


The Annual International Electron Devices Meeting
will be held at the Hilton San Francisco Union Square
San Francisco, CA
December 7-11, 2019

DOWNLOAD the 2019 Call for Papers

As in the past two years, the paper submission deadline has been moved to August 1st for submission of four-page, camera-ready papers to provide faster dissemination of the conference’s cutting-edge results. Accepted papers will be published as-is in the proceedings.

Customized Call for Papers for each of the technical subcommittee areas are also available:

 Typical themes of interest in IEDM2018:New or trending areas:
CIRCUIT, DESIGN and DEVICE INTERACTIONS (CDI)• Platform Technologies for continuous scaling
• Neuromorphic and non-von Neumann architecture/circuits
• Co-optimization of novel circuits, device, and interconnects
• Variability, reliability, and characterization for robust circuit design
• New concept computing models
• Stacked and monolithic 3D integration
CHARACTERIZATION, RELIABILITY and YIELD (CRY)• Transistor degradation due to BTI, hot carriers
• Soft-errors in logic and memory as well as error correction
• ESD and latch-up mechanisms
• Time dependent breakdown of dielectrics (FEOL/MEOL/BEOL)
• Interconnect and contact degradation (MEOL/BEOL)
• III-V power management
• Resistive devices
• Emerging memories
COMPOUND SEMICONDUCTOR AND HIGH SPEED DEVICES (CHS)• Devices enabling mm-wave and terahertz applications
• Highly scaled devices
• Devices for RF power amplifiers
• Devices for low noise amplifiers
• High power density mm-wave and microwave devices
• Thermal management and active device cooling
• Charge-based memories
• In-memory computing and brain-inspired computing
• Memory modeling
• Neuromorphic and memory architectures for machine learning
• Emerging non-volatile memories
• 3D memory technologies
MODELING AND SIMULATION (MS)• Material and interface modeling
• Technology benchmarking of advanced devices
• Compact models
• Reliability and variability modeling
• First principle based quantum transport
• Kinetic Monte Carlo and molecular dynamics
• Process simulation with atomistic methods
• Modelling for advanced manufacturing
NANO DEVICE TECHNOLOGY (NDT)• Negative capacitance and sub-60mV/dec devices
• 2D and low-dimensional materials and devices
• Spin and magnetic devices
• Emerging non-volatile memory devices
• Device modeling and experimental validation
• Neuromorphic devices
• Quantum computing devices
• Ferroelectric devices
OPTOELECTRONICS, DISPLAYS, and IMAGERS (ODI)• Large scale heterogeneous integration
• Light sources
• High speed photodetectors
• Organic and inorganic displays
• High speed and high time resolution imagers
• VCSEL/micro LED displays
• Non-visible light imagers
POWER DEVICES (PD)• Si, GaN and SiC power devices
• Methods and designs for reduced dynamic Ron in power switches
• Device integration
• Fundamental studies leading to breakthrough in dielectric, thermal management, reliability, doping etc.
• High Voltage SiC MOSFETs
• GaN Power devices
• Novel superjunction devices
• Ultra-widebandgap devices (Diamond, Ga2O3, AlN etc.)
• 3D integration technologies
• Integration technologies for photonics
• Process and technologies for quantum computing and neuromorphic
• Selective deposition/etch
• Artificial intelligence for manufacturing
SENSORS, MEMS, and BioMEMS (SMB)• Physical and biochemical sensors
• Energy harvesting and storage devices
• Flexible devices for wearable applications
• MEMS for Internet of Things
• Bio-electronics and implantable devices for health applications
• Additive technologies and 3D printing for micro/nano-fabrication
• Optomechanical devices and sensors
• Hybrid organic/inorganic devices