Session 4: Display and Imaging Systems Advanced Image Sensors and Light Emitting Devices
Monday, December 15, 1:30 p.m.
Continental Ballroom 1-3
Co-Chairs: Ryoichi Ishihara, TU Delft
Jack Luo, Zhejiang University
4.1 MOS Capacitor Deep Trench Isolation for CMOS Image Sensors, N. Ahmed, F. Roy, G-N. Lu*, B. Mamdy,
J-P. Carrere, A. Tournier, N. Virollet, C. Perrot, M. Rivoire, A. Seignard**, D. Pellissier-Tanon, F. Leverd and B.
Orlando, STMicroelectronics, *CNRS, **CEA-LETI
This paper proposes the integration of MOS Capacitor Deep Trench Isolation (CDTI) as a solution to boost image
sensors’ pixels performances. We have investigated CDTI and compared it to oxide-filled Deep Trench Isolation (DTI)
configurations, on silicon samples, with a fabrication based on TCAD simulations. The experiment measurements
evaluated on CDTI without Sidewall Implantation exhibit very low dark current (~1aA at60°C for a 1.4µm pixel), high
full-well capacity (~12000e-), and it shows quantum efficiency improvement compared to DTI configuration.
4.2 Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel A/D Converters Fabricated by
Direct Bonding of SOI Layers, M. Goto, K. Hagiwara, Y. Iguchi, H. Ohtake, T. Saraya*, M. Kobayashi*, E. Higurashi*,
H. Toshiyoshi* and T. Hiramoto*, NHK Science and Technology Research Laboratories, *The University of Tokyo
We report the first demonstration of three-dimensional integrated CMOS image sensors with pixel-parallel A/D
converters. Photodiode and inverter layers were directly bonded to provide each pixel with in-pixel A/D conversion. The
developed sensor successfully captured images and confirmed excellent linearity with a wide dynamic range of more than
4.3 High Sensitivity Image Sensor Overlaid with Thin-Film Crystalline-Selenium-based Heterojunction
Photodiode, S. Imura, K. Kikuchi, K. Miyakawa, H. Ohtake, M. Kubota, T. Okino*, Y. Hirose*, Y. Kato* and N.
Teranishi**, NHK Science and Technology Research Laboratories, *Panasonic Corporation, **University of Hyogo
We developed a stacked image sensor on the basis of thin-film crystalline-selenium (c-Se) heterojunction photodiode.
Tellurium-diffused crystallization of producing uniform c-Se films was used to fabricate c-Se-based photodiodes
laminated on complementary metal-oxide-semiconductor (CMOS) circuits, and we present herein the first high-resolution
images obtained with such devices.
4.4 9.74-THz Electronic Far-Infrared Detection Using Schottky Barrier Diodes in CMOS, Z. Ahmad, A.
Lisauskas*, H.G. Roskos* and K.K. O, University of Texas at Dallas, *JWG University
9.74-THz fundamental electronic detection for Far-Infrared (FIR) radiation is demonstrated. The detection along with that
at 4.92 THz was realized using Schottky-barrier diode detection structures formed without any process modifications in
CMOS. Peak optical responsivity (Rv) of 383 and ~14V/W at 4.92 and 9.74THz have been measured. The Rv at 9.74THz
is 14X of that for the previously reported highest frequency electronic detection. The shot noise limited NEP at 4.92 and
9.74THz is ~0.43 and ~2nW/√Hz.
4.5 Experimental Demonstration of a Stacked SOI Multiband Charged-Coupled Device, C.-E. Chang, J. Segal*,
A. Roodman*, C. Kenney* and R. Howe, Stanford University, *SLAC National Accelerator Laboratory
Multiband light absorption and charge extraction in a stacked SOI multiband CCD are experimentally demonstrated for
the first time. This proof of concept is a key step in the realization of the technology which promises multiple-fold
efficiency improvements in color imaging over current filter- and prism-based approaches.
4.6 Enhanced Time Delay Integration Imaging using Embedded CCD in CMOS Technology, P. De Moor, J.
Robbelein, L. Haspeslagh, P. Boulenc, A. Ercan, K. Minoglou, A. Lauwers, K. De Munck and M. Rosmeulen, IMEC
Imec developed a new imager platform enabling the monolithic integration of 130 nm CMOS/CIS with charge coupled
devices (CCD). The process module was successfully developed and the potential of this embedded CCD in CMOS
(eCCD) was demonstrated with the fabrication of a time delay integration (TDI) imager.
4.7 A Solid State Thin Film Incandescent Light Emission Device, Y. Kuo and C.-C. Lin, Texas A&M University
A new type of solid state thin film light emitting device has been studied. The white light is emitted due to thermal
excitation of the nano size conductive paths self-aligned to the gate electrode and embedded in the high-k dielectric film.
It is a solid state incandescent device. The mechanism of light emission, optical characteristics, reliability, driving
methods, and energy efficiency are discussed. This kind of device can be fabricated with IC compatible materials and
processes. It is applicable to a wide range of products.