Session 34: Nano Device Technology Devices Bsed on Quantum and Resistive Switching Phenomena
Wednesday, December 7, 1:30 p.m.
Continental Ballroom 5
Co-Chairs: Joachim Knoch, RWTH Aachen University
Wei Lu, University of Michigan
34.1 Coupling MOS Quantum Dot and Phosphorous Donor Qubit Systems, M. Rudolph, P. Harvey-Collard, R. Jock, T. Jacobson, J. Wendt, T. Pluym, J. Dominguez, G. Ten-Eyck, R. Manginell, M. Lilly and M. Carroll, Sandia National Labs
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two- axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes . Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
34.2 Quantum Information Processing in a Silicon-based System, T.-Y. Yang, A. Andreev, Y. Yamaoka*, T. Ferrus, S. Oda, T. Kodera*, D. Williams, Hitachi Europe Ltd., *Tokyo Institute of Technology
For the first time, long coherence times up to tens of microseconds were observed in a silicon-based charge quantum bit (qubit) device at 4.2 K. The coherence times demonstrated in this paper are two orders of magnitude longer, and the operating temperature is two orders of magnitude higher than the reported semiconductor charge qubit systems. The first observation of the interaction between two sets of capacitively coupled charge movements was achieved by using our accurate charge detection technique.
34.3 Experimental Demonstration of Nanomagnet Networks as Hardware for Ising Computing, P. Debashis, R. Faria, K. Camsari, J. Appenzeller, S. Datta and Z. Chen, Purdue University
This work explores nanomagnet networks as potential hardware for Ising computing, which is a field of much interest with applications in solving complex optimization problems, but lacks a natural hardware for implementation. We experimentally demonstrate that nanomagnets form natural stochastic elements, which when interconnected through configurable connections, mimic Ising networks.
34.4 Functional Passive Material VO2 for Analogue Signal Processing with High-Speed, Low Power, and Robust Performance, T. Yajima, T. Nishimura and A. Toriumi, The University of Tokyo
The voltage-induced metal-insulator transition in VO2 was used for a two-terminal hysteretic voltage switch. The switch showed more than 10^9 switching cycles and the arbitrary values of switching threshold and hysteresis. It enabled us to implement functionalities for analogue signal processing: (1) the noise canceling in analogue-digital conversion, (2) all-passive-element charge pumping, and (3) the two-terminal high-frequency limiter with excellent linearity.
34.5 Low-Voltage Artificial Neuron using Feedback Engineered Insulator-to-Metal-Transition Devices, J. Lin, A. Annadi, S. Sonde, C. Chen, L. Stan, K.V.L.V. Achari*, S. Ramanathan* and S. Guha, Argonne National Laboratory, *Purdue University
We demonstrate a solid-state spiking artificial neuron based upon an insulator-to-metal (IMT) transition material element that operates at an unprecedented low voltage (0.8 V). We have developed a general coupled electrical-thermal device model for IMT based devices to accurately predict experimental outcomes. From the experiment and simulation, we show that voltage scalability to sub 0.3 V is possible by scaling of the IMT based neuron.
34.6 Ag/HfO2 based Threshold Switch with Extreme Non-Linearity for Unipolar Cross-Point Memory and Steep-slope Phase-FETs, N. Shukla, B. Grisafe, R. K. Ghosh, N. Jao*, A. Aziz*, J. Frougier*, M. Jerry, S. Sonde**, S. Rouvimov, T. Orlova, S. K. Gupta*, S. Datta, University of Notre Dame, *The Pennsylvania State University, **University of Chicago
In this work, we demonstrate (1) A novel Ag/HfO2 based TS with ~107 selectivity, ION=100µA, and IOFF~10pA; (2) Feasibility of implementing the TS as a selector for PCM based cross-point memory; (3) A sub-kT/q (<3mV/dec over 5 orders of IDS) Phase-FET with >10x higher ION.
34.7 Excellent Threshold Switching Device (IOFF ~ 1 pA) with Atom-scale Metal Filament for Steep slope (< 5 mV/dec), Ultra Low Voltage (VDD = 0.25 V) FET Applications, S. Lim, J. Yoo, J. Song, J. Woo, J. Park and H. Hwang, Pohang University of Science and Technology (POSTECH) To realize a steep-slope-FET with low leakage current and low operating bias, we engineered two types of atom-switch devices and integrated them with a silicon MOSFET. The integrated atom-switch-FET exhibits extremely low leakage current (10^-7 μA/μm), high ION/IOFF ratio (> 10^7), low operating bias (< 1 V) and sub-5 mV/dec subthreshold swing with abrupt transition range of 10^4. Furthermore, through the comprehensive understanding on the steep-slope- transition phenomenon, control parameters of atom- switch devices such as ROFF and Vth, AS for optimal performances of atom-switch-FET were investigated at various operating bias conditions.
34.8 2D h-BN Based RRAM Devices, F. M. Puglisi, L. Larcher, C. Pan*, N. Xiao*, Y. Shi*, F. Hui*, M. Lanza*, Università di Modena e Reggio Emilia, *Soochow University
This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The devices show low set/reset voltages, high on/off current ratio, good endurance and very low overall variability. Experimental results are interpreted using a novel simulation framework, which proves that the memory behavior is enabled by the manipulation of a boron (B)-deficient conductive filament (CF). The cyclical release and diffusion of B ions are the key physical mechanisms responsible for switching.