Session 29: Compound Semiconductor and High Speed Devices Ultra-High Speed Electronics
Wednesday, December 7, 9:00 a.m.
Continental Ballroom 6
Co-Chairs: Mark Rodwell, University of California, Santa Barbara
Dae-Hyun Kim, Kyungpook National University
29.1 InP HEMT Integrated Circuits Operating above 1,000 GHz (Invited), W. Deal, K. Leong, W. Yoshida, A. Zamora and X.B. Mei, Northrop Grumman Corporation
The last decade has seen tremendous increase in the operating frequency of transistor based in electronics. With InP HEMTs reaching 1.5 THz fMAX and 610 GHz fT, operating frequencies of integrated circuit amplifiers have seen corresponding increase to as high as 1 THz. This paper describes the transistor process, integrated circuit results at 1 THz, as well as background on packaging and measurements at this frequency.
29.2 A 130 nm InP HBT Integrated Circuit Technology for THz Electronics (Invited), M. Urteaga, J. Hacker, Z. Griffith, A. Young, R. Pierson, P. Rowell, M. Seo* and M. Rodwell, Teledyne Scientific Company, *SungKyunKwan University
A 130 nm InP HBT IC technology has been developed capable of circuit demonstrations at > 600 GHz. Transistors demonstrate RF figures-of-merit ft > 500 GHz and fmax > 1 THz. The HBTs support high current densities > 25 mA/um^2 with a common- emitter breakdown voltage BVCEO = 3.5V. The technology includes a multi-level thin-film wiring environment capable of low-loss THz signal routing and high integration density. A large-signal HBT model has been developed capable of accurately predicting circuit performance at THz frequencies. Circuit demonstrations include fundamental oscillators and amplifiers operating at > 600 GHz as well as integrated transmitter and receiver circuits.
29.3 Resonant-Tunneling-Diode Terahertz Oscillators and Applications (Invited), M. Asada and S.Suzuki, Tokyo Institute of Technology
We report on our recent results of resonant tunneling diodes oscillating in the terahertz frequency range, including the structures for high frequency oscillation up to 1.92 THz at room temperature, high output power, high-speed direct modulation for wireless communication, and frequency tenability for spectroscopy.
29.4 Physics of Ultrahigh Speed Electronic Devices (Invited), M. Shur, Rensselaer Polytechnic Institute
Feature sizes of advanced commercial electronic devices are now smaller than the mean free path of the electron collisions with impurities and lattice vibrations. This completely changes the physics of the electron transport. The effective field effect mobility becomes proportional to the device length because the electrons lose their drift momentum in the contacts. The high frequency impedance is strongly affected by the electron inertia and by the phase delays of the opposing electron fluxes in the device channel. The waves of the electron density (plasma waves) enable the device response well into the terahertz (THz) range of frequencies. At high excitation levels, these waves are transformed into the shock waves. The rectification and instabilities of the plasma waves enable a new generation of THz plasmonic devices. Ballistic and plasmonic effects in short channel FETs (such as commercial 10 nm Si CMOS) dramatically change the device physics. Exploring and using these effects should lead to the development of efficient and cost competitive THz electronics greatly expanding numerous applications of THz technology.
29.5 InP/GaAsSb DHBTs for THz Applications and Improved Extraction of their Cutoff Frequencies (Invited), C. Bolognesi, R. Flückiger, M. Alexandrova, W. Quan, R. Lövblom and O. Ostinelli, ETHZ
InP/GaAsSb DHBT development is reviewed and contextualized with respect to other III-V high-speed technologies. Pertinent material properties and challenges in the proper assessment of fMAX are discussed. An iterative de-embedding algorithm involving no additional test structures/measurements yields the correct fMAX from unilateral gain data for both DHBTs and HEMTs.
29.6 On-Chip Terahertz Electronics: From Device-Electromagnetic Integration to Energy-Efficient, Large-Scale Microsystems (Invited), R. Han, J. Holloway, C. Jiang*, A. Mostajeran*, E. Afshari**, A. Cathelin***, Y. Zhang^, K. O^, L. Boglione^^, T. Hancock^^^, C. Wang, Z. Hu and G. Zhang, Massachusetts Institute of Technology, *Cornell University, **University of Michigan, ***STMicroelectronics, ^University of Texas at Dallas, ^^Naval Research Laboratories, ^^^MIT Lincoln Laboratories
This paper summarizes our approaches which synthesize the optimum electromagnetic (EM)-wave environment around various silicon devices, in order to maximize the device efficiency with minimum passive loss and footprint. This has enabled multi-mW THz radiation in standard silicon processes. Various critical capabilities for future THz microsystems, including integrated phase locking, multi-pixel coherent imag-ing, and an ultra-broadband inter-chip waveguide link, are also demonstrated.
29.7 Active Terahertz Metasurface Devices (Invited), H.-T. Chen, Los Alamos National Laboratory
Metamaterials and metasurfaces have demonstrated many unusual properties that are useful for creating high-performance terahertz devices and components. Integration of functional materials allows metasurfaces to expand their scope of applications. Here we show that hybrid metasurfaces can provide ultrafast modulation of terahertz waves that are critical for future applications in terahertz imaging and communications.
29.8 Devices and Circuits in CMOS for THz Applications (Invited), Z. Ahmad, W. Choi, N. Sharma, J. Zhang*, Q. Zhong, D.-Y. Kim, Z. Chen, Y. Zhang, R. Han+, D. Shim**, S. Sankaran***,. C. Cao^, C. Mao^^, I. Medvedev^^^, D. Lary, H.-J. Nam, P. Raskin#, F. DeLucia##, I. Kim###, I. Momson, P. Yelleswarapu, and S. Dong, University of Texas at Dallas, *NXP, **Seoul National University of Science & Technology, ***Texas Instruments Inc., ^MediaTek, ^^IDT, ^^^Wright State University, #UTSouthwestern, ##Ohio State University, ###UConn Health, +MIT
Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.