Session 22: Optoelectronics, Displays, and Imagers Optoelectronic Integration
Tuesday, December 6, 2:15 p.m.
Imperial Ballroom B
Co-Chairs: Zhiping (James) Zhou, Peking University
Boon S. Ooi, KAUST
22.1 High-mobility TFT and Enhanced Luminescence Utilizing Nucleation-controlled GeSn Growth on Transparent substrate for Monolithic Optoelectronic Integration, H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura and H. Watanabe, Osaka University
We proposed a novel GeSn growth technique on transparent substrate based on the liquid-phase crystallization and obtained high-quality tensile-strained GeSn alloy on quartz substrate. Significantly enhanced direct bandgap luminescence and high-performance GeSn p- and n-type TFTs were demonstrated for the first time.
22.2 First Demonstration of a Back-Side Integrated Heterogeneous Hybrid III-V/Si DBR Lasers for Si-Photonics Applications, J. Durel, B. B. Bakir*, C. Jany*, S. Cremer, B. Szelag*, T. Bria*, V. Larrey*, L. Sanchez*, P. Brianceau*, J.-A. Dallery**, R. Guiavarch*, T. Card*, R. Thibon*, J.-E. Broquin***, F. Boeuf, STMicroelectronics, *CEA-LETI, **Vistec Electron Beam GmbH, ***IMEP-LAHC
In this paper, we demonstrate for the first time the integration of a III-V/Si hybrid laser on the back-side of a SOI wafer. This integration allows preserving the compatibility with Si-waveguide integration and with CMOS front-side metal interconnects, while leveraging passive and active photonic device design.
22.3 GeSn Lasers for CMOS Integration (Invited), D. Buca, N. von den Driesch, D. Stange, S. Wirths, and R. Geiger*, Forschungszentrum Julich GmbH, *LMN
22.4 High Gain Semiconductor Optical Amplifier – Laser Diode at Visible Wavelength, C. Shen, C. Lee*, T. Khee Ng, S. Nakamura*, J. Speck*, S. DenBaars*, A. Alyamani**, M. El-Desouki** and B. Ooi, King Abdullah University of Science and Technology, *University of California, Santa Barbara, **King Abdulaziz City for Science and Technology
We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32dB at VSOA=6V.
22.5 The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Direct Zener Tunneling Monolithically Integrated on Si, R. Koerner, D. Schwarz, I. Fischer, L. Augel, S. Bechler, L. Haenel, M. Kern, M. Oehme, E. Rolseth, B. Schwartz*, D. Weisshaupt, W. Zhang and J. Schulze, University of Stuttgart, *Brandenburg University of Technology Cottbus-Senftenberg
Experimental demonstration of a Ge optical-amplifier and superluminescent light source on Si (100). Direct Zener tunnel injection with 38 mV/dec features optical-amplification up to 4.7 dB at 92 mA, gain-bandwidth of 98 nm (150 cm-1) and pulsed lasing at 1667 nm (90 mA threshold) in a 1 mm waveguide.
22.6 On-chip Optical Sense Strategy Illustrated in the Case of Flash Memory System, J. Song, X. Luo, Y. Tang*, C. Li, L. Jia, X. Tu, Q. Fang, Y. Huang, H. Zhou, E.-J. Lim, T.-Y. Liow and G.-Q. Lo, A*STAR, *NXP Semiconductors
Different from traditional electronically-sensing memory states scheme, we propose and demonstrate an optical-sensing strategy, which enables all memory states being sense simultaneously. We illustrate the concept through the monolithic on-chip integration of optical microring resonator and memory array. The results show 1200× sensing speed improvement and with large up-scale potential.