IEDM

Session 19: Display and Imaging Systems – Focus Session – Flexible Hybrid Electronics

Tuesday, December 8, 2:15 p.m.
Jefferson Room
Co-Chairs:       John Kymissis, Columbia University
Tina Ng, PARC Research

2:20 p.m.
19.1        Flexible Electronics for Commercial and Defense Applications (Invited), E. Forsythe, B. Leever*, M. Gordon**, R. Vaia*, D. Morton, M. Durstock*, and R. Woods***, US Army Research Laboratory, *US Air Force Research Laboratory, **Office for the Secretary of Defense and NCAT, ***Defense Threat Reduction Agency

The talk will provide an overview of flexible electronic technology and applications for the Department of Defense. The electronics topics will include the following; manufacturing thin film transistor arrays for flexible digital x-ray technology, integration of electronic components on flexible substrates for applications such as distributed media, and an overview of the flexible hybrid electronics (FHE) that combines the manufacturing integration of electronic components such as Si CMOS and the direct manufacturing of sensors on flexible substrates. FHE DOD applications includes wearable devices, physiological monitoring, medical devices, and ubiquitous sensors, to name a few.

2:45 p.m.

19.2        Materials and Design Considerations for Fast Flexible and Stretchable Electronics (Invited), Z. Ma, Y.H. Jung, J.-H. Seo, T.-H. Chang, S.J. Cho, J. Lee, and W. Zhou*, University of Wisconsin-Madison, University of Texas-Arlington

We demonstrate critical individual active and passive components that are required to form fast flexible and stretchable electronics and discuss the suitable materials and design considerations that must be satisfied in order to form various functional circuits that operate in the very high frequency regime.

3:10 p.m.
19.3        ACF Packaged Ultrathin Si-based Flexible NAND Flash Memory (Invited), D.H. Kim, H.G. Yoo, D. Joe, and K.J. Lee, Korea Advanced Institute of Science and Technology (KAIST), *Korea Institute of Machinery & Materials (KIMM)

ACF packaged ultrathin Si-based flexible NAND flash memory was demonstrated. Electrical interconnection remained stable with mechanical resilience even after the 300,000 cycles of severe repetitive bending. Finally, packaging-completed ultrathin Si-based flexible NAND flash memory was fabricated, showing stable memory operation and reliability even under harsh bending condition.

3:35 p.m.
19.4        Free Form CMOS Electronics: Physically Flexible and Stretchable (Invited), M.M. Hussain, J.P. Rojas, G.A. Torres Sevilla, A.M. Hussain, M.T. Ghoneim, A.N. Hanna, A.T. Kutbee, J.M. Nassar and M. Cruz, King Abdullah University of Science and Technology (KAUST)

We show integration strategy to rationally design materials and processes to transform advanced complementary metal oxide semiconductor (CMOS) electronics into flexible and stretchable one while retaining their high performance, energy efficiency, ultra-large-scale-integration (ULSI) density, reliability and performance over cost benefit to expand its applications for wearable, implantable and Internet-of-Everything electronics.

4:00 p.m.
19.5        Large Area Sensing Surfaces: Flexible Organic Printed Interfacing Circuits and Sensors (Invited), S. Jacob, M. Benwadih, J. Bablet, M. Charbonneau, A. Aliane, A. Plihon, and A.Revaux, University of Grenoble Alpes, CEA, LITEN

Organic Large Area Electronics has been identified as a key enabling technology for smart sensing. This paper presents the last major results on different printed organic interfacing circuits and sensors which have been integrated together to achieve an image sensor on a flexible plastic substrate, demonstrating the potential of our technology for large area sensing surfaces.

4:25 p.m.
19.6        ZnO Thin Film Transistors for More than Just Displays (Invited), H.U. Li, J.I. Ramirez, K.G. Sun, Y. Gong, Y.V. Li, and T. Jackson, Penn State University

We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin (few microns thick) solution-cast polymeric substrates that can be flexed to small radius for thousands of cycles.

4:50 p.m.
19.7        Organic Thin Film Transistors for Flexible Electronics (Invited), C. Harrison, I. Horne, M. Banach, FlexEnable

OTFTs are fundamentally the most flexible transistor technology available, offering a route to truly flexible electronic devices. OTFTs have shown substantial improvements in performance over the past 25 years with further improvements still to come. FlexEnable has demonstrated flexible, full colour OLCDs build on ultra-low cost TAC substrates. FlexEnable has shown that their OTFTs can exceed the performance of a-Si and show good performance under reliability testing.

5:15 p.m.
19.8        Flexible 2D FETs using hBN Dielectrics (Invited), N. Petrone, X. Cui, J. Hone, T. Chari, K. Shepard, Columbia University

Two-dimensional (2D) materials such as graphene and molybdenum disulfide (MoS2) are promising for flexible electronics because of their combination of unique electrical properties and mechanical robustness. However, conventional oxides are not well matched as complementary dielectrics for 2D channel materials. We have pioneered the use of a 2D dielectric, hexagonal boron nitride (hBN), as a better alternative. In particular, we have recently demonstrated techniques to encapsulate graphene in hBN and achieve robust contacts at an etched one- dimensional edge.